稀土元素掺杂对BZT基陶瓷介电性能的影响
发布时间：2018-11-06 08:46
【摘要】：具有ABO3型结构的Ba Ti O3基及其固溶体陶瓷介质材料是制备多层陶瓷电容器的重要原料。通常采用在Ba Ti O3体系中引入其他元素的方式,用于改变其微观结构,从而改变其介电性能,达到实际应用的要求。采用固相反应法制备Dy2O3、Nd2O3、Y2O3以及Ca O掺杂的Ba Zr0.1Ti0.9O3陶瓷粉体,采用液相包覆法在制得BZT基陶瓷粉体表面包覆Al2O3。根据阿基米德排水法对试样的体积密度进行了测试;采用XRD分析测试烧成后的试样的物相组成以及晶格结构;采用SEM分析观察烧成后的试样的表面及断面形貌。采用电容测量仪测试试样的介电性能。研究所得结果表明:随着Dy2O3掺杂量的增加,试样的室温介电常数εr逐渐增加,试样的室温介电损耗tanδ稍有增加之后逐渐减小。随着Nd2O3掺杂量的增加,试样的室温介电常数εr逐渐增加,而在Nd2O3的掺杂量较小时,试样的介电损耗tanδ明显地增大,而后试样的介电损耗tanδ逐渐减小。当Y2O3的掺杂量为0.05mol%时,材料的室温介电损耗达到最小值,此时的介电常数在2032~2168之间,当体系中Y2O3的量增加时,试样的介电常数基本保持逐步升高的趋势,当掺杂量较大时,又有一定程度的降低。随着Ca O加入量的增加,试样的室温介电常数增加,而试样的介电损耗变化与掺杂量呈现非线性关系,介电常数随温度变化的变化率逐渐减小,且居里峰向低温方向移动。随着Al2O3包覆量不断增加,试样的介电常数逐渐降低,而试样的介电损耗逐渐增高,电容变化率△C/C逐渐降低,并且居里峰向低温方向移动。
[Abstract]:Ba Ti O3 base with ABO3 structure and its solid solution ceramic dielectric material are important materials for the preparation of multilayer ceramic capacitors. The method of introducing other elements into Ba Ti O 3 system is usually used to change the microstructure of Ba Ti O3 system, thus to change its dielectric properties and meet the requirements of practical application. Dy2O3,Nd2O3,Y2O3 and Ca O doped Ba Zr0.1Ti0.9O3 ceramic powders were prepared by solid state reaction. The surface of BZT based ceramic powders was coated with Al2O3. by liquid phase coating method. The bulk density of the samples was measured according to Archimedes drainage method; the phase composition and lattice structure of the sintered samples were measured by XRD analysis; and the surface and cross section morphology of the sintered samples were observed by SEM analysis. The dielectric properties of the samples were measured by capacitance measuring instrument. The results show that the dielectric constant 蔚 r increases gradually with the increase of Dy2O3 doping content, and the dielectric loss tan 未 decreases gradually after a slight increase in the dielectric loss at room temperature. With the increase of Nd2O3 doping, the dielectric constant 蔚 r increases at room temperature, but the dielectric loss tan 未 increases obviously when the doping amount of Nd2O3 is small, and then the dielectric loss tan 未 decreases gradually. When the doping amount of Y2O3 is 0.05 mol%, the dielectric loss at room temperature reaches the minimum, and the dielectric constant is between 2032 and 2168. When the content of Y2O3 in the system increases, the dielectric constant of the sample basically keeps the trend of increasing gradually. When the doping amount is large, there is a certain degree of reduction. With the increase of Ca O content, the dielectric constant of the sample increases at room temperature, while the dielectric loss of the sample shows a nonlinear relationship with the doping amount, the rate of change of the dielectric constant decreases with the change of temperature, and the Curie peak moves towards low temperature. With the increasing of Al2O3 coating, the dielectric constant of the sample decreases gradually, while the dielectric loss of the sample increases, the change rate of capacitance C / C decreases, and the Curie peak moves towards low temperature.
【学位授予单位】：华北理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ174.1
本文编号：2313790
[Abstract]:Ba Ti O3 base with ABO3 structure and its solid solution ceramic dielectric material are important materials for the preparation of multilayer ceramic capacitors. The method of introducing other elements into Ba Ti O 3 system is usually used to change the microstructure of Ba Ti O3 system, thus to change its dielectric properties and meet the requirements of practical application. Dy2O3,Nd2O3,Y2O3 and Ca O doped Ba Zr0.1Ti0.9O3 ceramic powders were prepared by solid state reaction. The surface of BZT based ceramic powders was coated with Al2O3. by liquid phase coating method. The bulk density of the samples was measured according to Archimedes drainage method; the phase composition and lattice structure of the sintered samples were measured by XRD analysis; and the surface and cross section morphology of the sintered samples were observed by SEM analysis. The dielectric properties of the samples were measured by capacitance measuring instrument. The results show that the dielectric constant 蔚 r increases gradually with the increase of Dy2O3 doping content, and the dielectric loss tan 未 decreases gradually after a slight increase in the dielectric loss at room temperature. With the increase of Nd2O3 doping, the dielectric constant 蔚 r increases at room temperature, but the dielectric loss tan 未 increases obviously when the doping amount of Nd2O3 is small, and then the dielectric loss tan 未 decreases gradually. When the doping amount of Y2O3 is 0.05 mol%, the dielectric loss at room temperature reaches the minimum, and the dielectric constant is between 2032 and 2168. When the content of Y2O3 in the system increases, the dielectric constant of the sample basically keeps the trend of increasing gradually. When the doping amount is large, there is a certain degree of reduction. With the increase of Ca O content, the dielectric constant of the sample increases at room temperature, while the dielectric loss of the sample shows a nonlinear relationship with the doping amount, the rate of change of the dielectric constant decreases with the change of temperature, and the Curie peak moves towards low temperature. With the increasing of Al2O3 coating, the dielectric constant of the sample decreases gradually, while the dielectric loss of the sample increases, the change rate of capacitance C / C decreases, and the Curie peak moves towards low temperature.
【学位授予单位】：华北理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ174.1
【参考文献】
相关期刊论文 前1条
1 王晓凤;曲远方;李小燕;李远亮;;La_2O_3对Ba_(0.92)Sr_(0.08)Ti_(0.9)Sn_(0.1)O_3介质瓷结构及性能的影响[J];压电与声光;2009年04期
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