不同碳源和反应温度对原位合成SiC-TiC超细粉末的影响
发布时间：2019-04-22 07:33
【摘要】：以碳化硅(SiC)、二氧化钛(TiO_2)和不同种类碳源为初始原料,采用碳热还原法在氩气气氛下原位合成SiCTiC超细粉末。探讨了不同碳源和不同反应温度对所合成的SiC-TiC超细粉末的物相组成和显微形貌的影响。采用X-射线衍射仪(XRD)、激光粒度分析仪、扫描电镜(SEM)等手段对所合成的SiC-TiC超细粉末进行表征。实验结果表明,以蔗糖为碳源合成SiC-TiC超细粉末的适宜条件为1450℃保温2 h;以炭黑或葡萄糖为碳源合成超细粉末的适宜条件为1500℃保温2 h。三种碳源中以炭黑为碳源时所合成的SiC-TiC超细粉末粒度最小且合成出的粉末样品分散性好,大部分球状颗粒在0.5~1.0μm左右。在SiC粉末中原位合成的TiC颗粒,以粒径在0.1~0.2μm左右的不规则的多样化结构颗粒存在。
[Abstract]:Using silicon carbide (SiC), titanium dioxide (TiO_2) and different kinds of carbon sources as raw materials, SiCTiC ultrafine powders were in situ synthesized in argon atmosphere by carbothermal reduction method. The effects of different carbon sources and reaction temperatures on the phase composition and microstructure of SiC-TiC ultrafine powders were investigated. The SiC-TiC ultrafine powder was characterized by X-ray diffractometer (XRD), laser particle size analyzer and scanning electron microscope (SEM). The results showed that the optimum conditions for the synthesis of ultra-fine powder of SiC-TiC were 1450 鈩，
本文编号：2462627
[Abstract]:Using silicon carbide (SiC), titanium dioxide (TiO_2) and different kinds of carbon sources as raw materials, SiCTiC ultrafine powders were in situ synthesized in argon atmosphere by carbothermal reduction method. The effects of different carbon sources and reaction temperatures on the phase composition and microstructure of SiC-TiC ultrafine powders were investigated. The SiC-TiC ultrafine powder was characterized by X-ray diffractometer (XRD), laser particle size analyzer and scanning electron microscope (SEM). The results showed that the optimum conditions for the synthesis of ultra-fine powder of SiC-TiC were 1450 鈩，
本文编号：2462627
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