单晶SiC化学机械抛光液的固相催化剂研究

发布时间：2018-02-13 18:34

本文关键词： 碳化硅化学机械抛光芬顿反应固相催化剂去除效率　出处：《机械工程学报》2017年21期 　论文类型：期刊论文

【摘要】：针对单晶Si C化学机械抛光使用的抛光液,研究了产生芬顿反应Fe、Fe O、Fe_2O_3、Fe_3O_4等4种铁系固相催化剂的效果。结果发现当Fe_3O_4作为催化剂时,Si C表面能够产生明显的化学反应,生成较软易去除的Si O_2氧化层,化学机械抛光时材料去除率最高达到17.2 mg/h、表面粗糙度最低达到R_a2.5 nm。相比Fe、Fe O、Fe_2O_3等固相催化剂,Fe_3O_4更适宜用作Si C的化学机械抛光。抛光液中Fe~(2+)离子浓度和稳定性是决定芬顿反应速率和稳定性的重要因素,固相催化剂电离自由Fe~(2+)能力的差异直接影响了化学抛光液中的Fe~(2+)浓度,固相催化剂电离Fe~(2+)的能力越强,抛光液中Fe~(2+)浓度就越高,芬顿反应速率越快,与Si C进行化学反应速度越快,材料去除率越高,抛光质量越好。
[Abstract]:In view of the polishing liquid used in chemical mechanical polishing of single crystal sic, the effect of producing four iron series solid phase catalysts, such as Fenton reaction, FeFe2O3, Fe2O3, Fe3O4, etc., has been studied. The results show that when Fe_3O_4 is used as catalyst, the surface of Si C can produce obvious chemical reaction. The formation of a soft and easily removable oxide layer of Sio _ 2, The material removal rate is up to 17.2 mg / h, and the surface roughness is the lowest up to Ra2.5 nm.Compared with FeFeFe2O3 solid phase catalyst, Feal _ 3O _ 2O _ 4 is more suitable for chemical and mechanical polishing of sic. The concentration and stability of Fe~(2 ion in polishing solution are as follows:. An important factor that determines the rate and stability of the Fenton reaction, The difference in the ability of solid phase catalyst to ionize free Fe~(2 directly affects the concentration of Fe~(2 in the chemical polishing solution. The stronger the ability of solid phase catalyst to ionize Fe~(2), the higher the concentration of Fe~(2 in the polishing solution, and the faster the Fenton reaction rate is. The faster the chemical reaction with sic, the higher the material removal rate and the better the polishing quality.
【作者单位】：广东工业大学机电工程学院;
【基金】：国家自然科学基金(51375097) 广东省自然科学基金重点(2015A030311044) 高等学校博士学科点专项科研基金(20134420110001)资助项目
【分类号】：O643.36;TQ163.4

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