SnS薄膜掺杂及其器件研究

发布时间：2018-02-26 21:08

本文关键词： SnS薄膜磁控溅射脉冲激光沉积膜厚 Cu掺杂　出处：《合肥工业大学》2015年硕士论文　论文类型：学位论文

【摘要】：SnS是一种新型光伏材料,具有适合作为太阳电池和光电器件光吸收层的多种物理化学性质,具有良好的应用前景,SnS薄膜及其器件制备与性质的研究受到很大关注。本文对不同厚度SnS薄膜、Cu掺杂SnS薄膜及其异质结器件的制备和性能进行了系统研究。利用射频磁控溅射法在玻璃衬底上制备了不同厚度的SnS薄膜。用X射线衍射(XRD)、X射线能谱仪(EDS)、原子力显微镜(AFM)、场发射扫描电子显微镜(FE-SEM)和紫外-可见-近红外分光光度计(UV-VIS-NIR)分别对所制备薄膜的晶体结构、组分、表面形貌、厚度、反射率和透过率进行表征分析。研究结果表明：薄膜厚度的增加有利于改善薄膜的结晶质量和组分配比,晶粒尺寸和颗粒尺寸随着厚度的增加而变大。样品的折射率在1500nm-2500nm范围内随着薄膜厚度的增大而增大。样品在可见光区域吸收强烈,吸收系数达105cm-1量级。薄膜厚度增加到1042nm时禁带宽度为1.57eV,接近于太阳电池材料的的最佳光学带隙。利用脉冲激光沉积法(PLD)在玻璃衬底上制备了不同Cu掺杂浓度的SnS薄膜。对所制备的薄膜晶体结构、表面形貌、厚度、透过率和电学特性进行表征分析。研究结果表明：所有样品均沿着(111)晶面择优取向生长,随着Cu掺杂浓度的增大,(111)晶面的衍射峰不断增强,样品的表面粗糙度略增加。10%(原子比)掺Cu SnS薄膜出现了对应于Cu2SnS3的(131)晶面的衍射峰。Cu掺杂浓度在2.5%～7.5%的样品吸收系数相较于未掺杂的SnS薄膜有所提高。Cu掺杂明显提高了SnS薄膜的电导率,掺杂浓度为5%样品的电导率为169.0uS/cm,在3.5mW/cm2光照条件下光电导率为438.7uS/cm,光暗电导率之比为2.59。在玻璃衬底上制备了In/p-SnS/n-ZnS/ITO异质结器件,利用半导体参数表征系统进行了器件的电学特性测试。测试结果表明：器件具有良好的整流特性和较弱的光伏特性,在3.5mW/cm2光照条件下,开路电压Uoc为0.30V,短路电流密度Jsc为3.1×10-9A/cm2。
[Abstract]:SnS is a new type of photovoltaic material, which has many physical and chemical properties suitable for photoabsorption layer of solar cells and optoelectronic devices. The preparation and properties of SNS thin films and their devices have attracted much attention. In this paper, the preparation and properties of Cu-doped SnS thin films and their heterojunction devices with different thickness SnS thin films have been systematically studied. SnS thin films of different thickness were prepared on glass substrates by RF magnetron sputtering. X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM) and UV-Vis / NIR spectrophotometry were used. UV-VIS-NIRs were used to analyze the crystal structure of the films. The composition, surface morphology, thickness, reflectivity and transmittance of the films were characterized and analyzed. The results showed that the increase of the film thickness was beneficial to the improvement of the crystalline quality and the composition distribution ratio of the films. The grain size and particle size increase with the increase of thickness. The refractive index increases with the increase of film thickness in the range of 1500nm-2500nm. The absorption coefficient is 105 cm ~ (-1). When the thickness of the film increases to 1042 nm, the band gap is 1.57 EV, which is close to the optimum optical band gap of solar cell material. SnS with different Cu doping concentration was prepared on glass substrate by pulsed laser deposition method. Thin films-Crystal structure of the films prepared, The surface morphology, thickness, transmittance and electrical properties were characterized and analyzed. The results show that all the samples have preferred orientation along the crystal plane and the diffraction peak of the crystal plane increases with the increase of Cu doping concentration. The surface roughness of the sample increased slightly. 10 / (atomic ratio) Cu doped SnS thin film appeared diffraction peak corresponding to Cu2SnS3 crystal plane. The absorption coefficient of the sample with 2.5% Cu doping concentration was higher than that of the undoped SnS film. Cu-doped thin film was obviously improved. Cu-doped. High conductivity of SnS thin films, The conductivity of doped 5% samples was 169.0 US / cm, and the photoconductivity was 438.7 渭 s / cm under 3.5 MW / cm ~ 2 illumination. The ratio of light to dark conductivity was 2.59.The In/p-SnS/n-ZnS/ITO heterojunction devices were fabricated on glass substrates. The electrical properties of the device were tested by using the semiconductor parameter characterization system. The results show that the device has good rectifying characteristics and weak photovoltaic characteristics. Under 3.5 MW / cm ~ 2 illumination, the open-circuit voltage Uoc is 0.30 V and the short-circuit current density Jsc is 3.1 脳 10 ~ (-9) A / cm ~ (2) 路cm ~ (2).
【学位授予单位】：合肥工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TQ134.32;TB383.2

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