单斜氧化锆晶体压痕的分子动力学模拟研究

发布时间：2018-05-09 02:30

本文选题：分子动力学 + 单斜氧化锆　；参考：《太原理工大学学报》2017年06期

【摘要】：利用分子动力学方法模拟研究了单斜氧化锆晶体在不同晶面和不同加载速率时压入的变形行为,并采用配位数方法分析了不同压痕深度下基体原子组态和位错的变化情况,比较了不同晶面压痕的载荷-位移曲线和变形行为。结果表明,三个不同晶面压入时单斜氧化锆晶体呈现出3种不同的滑移面;(100)和(001)面的压痕形貌分别表现出pile-up和sink-in现象,且在这两个面的压入响应均出现载荷-位移曲线的间断波动。对(001)面不同加载速率压痕的研究结果表明在低速率加载时应力驰豫现象对基体应变硬化与载荷波动现象影响显著。
[Abstract]:The deformation behavior of monoclinic zirconia crystal under different crystal faces and loading rates was simulated by molecular dynamics method. The changes of matrix atomic configuration and dislocation at different indentation depths were analyzed by coordination number method. The load-displacement curves and deformation behaviors of different grain face indentation were compared. The results show that the indentation morphologies of the three different faces of monoclinic zirconia crystals show three different slip planes (100) and the indentation surfaces of the two surfaces show the phenomenon of pile-up and sink-in, respectively. The load-displacement curve fluctuates intermittently in the pressure-input response of both surfaces. The results of indentation at different loading rates on the surface show that stress relaxation has a significant effect on the strain hardening and load fluctuation of the matrix under low rate loading.
【作者单位】：太原理工大学应用力学与生物医学工程研究所;太原科技大学应用科学学院;
【基金】：国家自然科学基金资助项目(11390362)
【分类号】：TQ174.1

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