流化床-化学气相沉积法连续制备SiC纳米线

发布时间：2018-06-26 10:49

  本文选题：SiC + 纳米线　； 参考：《陶瓷学报》2017年03期

【摘要】：采用流化床化学气相沉积法,以甲基三氯硅烷为前躯体,二茂铁为催化剂成功制备出SiC纳米线。利用X射线衍射仪分析产物的物相,利用扫描电子显微镜和透射电子显微镜观察样品的显微形貌。结果表明,在1200 ℃的制备条件下,所得纳米线为立方相β-SiC,纳米线直径为50-100 nm,长度大于100μm,具有非常高的长径比。单根纳米线具有单晶特征,生长方向为111方向,并存在堆垛层错。提高制备温度至1300 ℃,在所制备的纳米线中,还发现了竹节状和堆垛状纳米线,表明流化床体系中复杂的沉积环境。通过连续的气体载带,可以实现SiC纳米线的连续制备,在50 mm直径的流化管中可获得2.0 g/h的产量。通过后续优化和放大,本方法具有非常好的工业化前景。
[Abstract]:Sic nanowires were prepared by fluidized bed chemical vapor deposition with methyl trichlorosilane as precursor and ferrocene as catalyst. The phase of the product was analyzed by X-ray diffractometer, and the morphology of the sample was observed by scanning electron microscope and transmission electron microscope. The results show that the nanowires are cubic phase 尾 -SiC at 1200 鈩，

本文编号：2070130