化学气相沉积法在Cu-Ni合金衬底上生长多层六方氮化硼

发布时间：2018-08-09 10:16

【摘要】：六方氮化硼(h-BN)由于其原子级平整的表面和宽带隙性质使其成为众多二维半导体材料理想的绝缘衬底.通常情况下通过化学气相沉积法在金属表面生长的h-BN表现出明显的自限生长效应,仅得到单原子层的h-BN.采用单原子层的h-BN作为其他二维半导体材料的基底对其下方衬底表面悬挂键及电荷的屏蔽效果有限,多层h-BN可以提高屏蔽效果.本文通过化学气相沉积法,采用生长-刻蚀-再生长的方案在铜镍合金衬底上成功制备得到多层h-BN晶畴,刻蚀过程使铜镍合金重新漏出,显著提高了下一阶段生长过程中多层h-BN的外延生长速率,通过该方案得到三角形状的多层h-BN晶畴尺寸可达10~20mm.同时,使用扫描电子显微镜、X射线光电子能谱、拉曼光谱、透射电子显微镜等一系列测试手段对多层h-BN表面形貌、化学成分及微观结构做了进一步表征.结果表明,h-BN中B 1s和N 1s的电子能谱峰值分别为190.4和397.8 e V,并且B和N两种元素的含量比为1.02:1;多层h-BN的拉曼光谱峰值位移在1365 cm~(-1),半高峰宽为18 cm~(-1);选区电子衍射结果说明,多层h-BN层间具有严格的AA′堆垛且每一层h-BN都具有相同的晶格取向.所有表征结果说明本文所得的多层h-BN单晶具有较好的晶体质量.
[Abstract]:Hexagonal boron nitride (h-BN) is an ideal insulating substrate for many two-dimensional semiconductor materials due to its flat surface at atomic level and wide band gap. In general, the h-BN grown on the metal surface by chemical vapor deposition has obvious self-limiting growth effect, and only the h-BNs of the monatomic layer can be obtained. Using monatomic layer h-BN as the substrate of other two-dimensional semiconductor materials, the shielding effect of the hanging bond and charge on the surface of the substrate is limited. Multilayer h-BN can improve the shielding effect. In this paper, multilayer h-BN crystal domains were successfully prepared on Cu-Ni alloy substrates by means of chemical vapor deposition (CVD) and the scheme of growth-etch-regrowth was adopted. The etching process made the Cu-Ni alloy leak out again. The epitaxial growth rate of multilayer h-BN in the next stage of growth is significantly increased. The size of multi-layer h-BN crystal domain with triangular shape can reach 10 ~ 20 mm by this scheme. At the same time, the surface morphology, chemical composition and microstructure of multilayer h-BN were further characterized by means of scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and transmission electron microscope (TEM). The results show that the peak values of electron spectrum of B _ 1s and N _ 1s in h-BN are 190.4 and 397.8 EV, respectively, and the ratio of B and N is 1.02: 1.The peak shift of Raman spectrum of multilayer h-BN is 1365 cm ~ (-1), the half-peak width is 18 cm ~ (-1). There is a strict AA 'stacking between the multilayer h-BN layers and each layer of h-BN has the same lattice orientation. All the characterization results show that the multilayer h-BN single crystal obtained in this paper has good crystal quality.
【作者单位】：中南大学物理与电子学院;中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室;
【基金】：国家自然科学基金(11304337)资助
【分类号】：TQ128

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