铝基板表面微弧氧化膜厚度对其导电导热性的影响

发布时间：2018-04-02 04:40

本文选题：铝基板　切入点：氧化铝　出处：《表面技术》2017年05期

【摘要】：目的对LED封装用铝基板表面进行微弧氧化处理,用以调控其界面的导电导热行为,并构建微弧氧化膜的厚度与其导电性及导热性之间的关联性。方法采用XRD表征了不同厚度微弧氧化膜的相结构,借助SEM观察了不同厚度膜层的表面微观形貌,利用高阻计测试了不同外加电压下膜层的电阻率,采用闪光法测定了不同温度下膜层的热扩散系数。结果微弧氧化膜主要由γ-Al_2O_3相组成,随膜层厚度的增加,膜层的相结构无显著变化,但其表面多孔结构出现了明显变化。膜层电阻率随膜厚的增大而升高,在膜厚从10μm增至40μm的过程中,电阻率增大了4~8倍。膜层电阻率随测试电压的升高而降低,当测试电压从50 V升至100 V时,电阻率降幅达1~2个数量级。膜层的热扩散系数随膜厚的增大出现波动,当膜厚为10~40μm时,热扩散系数的变化量为21.6~24.8 m~2/s。膜层热扩散系数随测试温度的升高而降低,降幅最高可达8.9 m~2/s。结论厚度为40μm的微弧氧化膜既具有高的电阻率(7.1×1012?·cm),又具有高的热扩散系数(98.0 m~2/s),有望满足LED铝基板的界面绝缘与散热要求。
[Abstract]:The surface of aluminum substrate for LED packaging was treated by micro-arc oxidation to regulate the conduction and heat conduction behavior of the interface. The relationship between the thickness of micro-arc oxide film and its electrical and thermal conductivity was constructed. Methods the phase structure of different thickness micro-arc oxide film was characterized by XRD, and the surface morphology of different thickness film was observed by SEM. The resistivity of the film under different applied voltage was measured by high resistance meter, and the thermal diffusion coefficient of the film at different temperature was measured by flash method. Results the micro-arc oxide film is mainly composed of 纬 -Al _ 2O _ 3 phase, and the thickness of the film increases with the thickness of the film. The phase structure of the film did not change significantly, but the porous structure of the film surface changed obviously. The resistivity of the film increased with the increase of the film thickness, and the film thickness increased from 10 渭 m to 40 渭 m. The resistivity increases by 4 ~ 8 times. The resistivity of the film decreases with the increase of the test voltage. When the test voltage increases from 50 V to 100 V, the resistivity decreases by 1 ~ 2 orders of magnitude. The thermal diffusion coefficient of the film fluctuates with the increase of the film thickness. When the thickness of the film is 10 ~ 40 渭 m, the thermal diffusion coefficient varies by 21.6 ~ 24.8 mm / s. The thermal diffusion coefficient of the film decreases with the increase of the test temperature, and the decrease is up to 8.9 m ~ (2) / s. Conclusion the thickness of 40 渭 m micro-arc oxide film has a high resistivity of 7.1 脳 10 ~ (12)? CMG, with a high thermal diffusion coefficient of 98.0 mm2 / s-1, is expected to meet the requirements of interfacial insulation and heat dissipation of LED aluminum substrates.
【作者单位】：西安科技大学材料科学与工程学院;
【基金】：陕西省自然科学基础研究计划项目(2015JQ5163) 陕西省教育厅科研计划项目(2013JK0900) 大学生创新创业训练计划项目(201610704039)~~
【分类号】：TG174.44

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