缓蚀剂1,2,4-三唑在铜CMP过程中的作用机理

发布时间：2018-05-21 21:38

本文选题：CMP + 化学反应活化能　；参考：《摩擦学学报》2017年03期

【摘要】：基于静态腐蚀试验和Arrhenius公式,探讨了缓蚀剂1,2,4-三唑在铜晶圆表面的吸附机制,分析了其对铜晶圆表面化学反应活化能的影响;结合CMP试验,阐释了BTA和1,2,4-三唑两种缓蚀剂对CMP材料去除速率的影响.结果表明:在酸性抛光液中,缓蚀剂1,2,4-三唑主要存在两种缓蚀机制:一是在铜表面形成吸附膜Cu:(1,2,4-TAH)_(ads),二是形成聚合物膜Cu(1,2,4-TA)_2.CMP过程中化学反应活化能的降低量不随抛光液中1,2,4-三唑的含量而变化.但是相对于BTA,使用含有1,2,4-三唑的抛光液时CMP过程中晶圆表面的化学反应活化能降低量较大,表明机械促进化学作用较强.本研究结果为CMP过程中抛光液的优化提供了理论支撑.
[Abstract]:Based on the static corrosion test and Arrhenius formula, the adsorption mechanism of corrosion inhibitor 1t2O4- triazole on the surface of copper wafer was discussed, and its effect on the activation energy of chemical reaction on the surface of copper wafer was analyzed. The effects of two corrosion inhibitors, BTA and 1 ~ 2H _ 4-triazole, on the removal rate of CMP materials were explained. The results show that in acid polishing solution, There are two kinds of corrosion inhibition mechanisms of corrosion inhibitor 1: 1) the adsorption film Cu1: 1 / 1 / 4-TAH4-TAH4-triazole is formed on the surface of copper. The second is that the reduction of the activation energy of chemical reaction does not change with the content of 1222 / 4- triazole in the polishing solution during the process of forming polymer membrane Cu1-2 + 2-TA2-TA2-TA2. CMP. However, compared with BTAs, the chemical activation energy of the wafer surface in the process of CMP using the polishing liquid containing 1k2m4- triazole is reduced by a large amount, which indicates that the mechanically promoted chemistry is stronger. The results provide theoretical support for the optimization of polishing solution in CMP process.
【作者单位】：中国石油大学(华东)机电工程学院;清华大学摩擦学国家重点实验室;
【基金】：国家自然科学基金项目(51405511) 中央高校基本科研业务费专项资金(16CX02005A)资助~~
【分类号】：TG174.42

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