微焊点中金属原子的热迁移及其对界面反应影响的研究进展

发布时间：2018-04-03 16:36

本文选题：电子封装　切入点：互连焊点　出处：《中国有色金属学报》2015年08期

【摘要】：电子产品的日益发展要求更高的封装密度、更好的性能和更小的尺寸,使得电子器件所承载的功率密度显著升高,由此产生严重的焦耳热问题,导致作为主要散热通道的微互连焊点内将产生较高的温度梯度,这将诱发金属原子的热迁移,并引起严重的可靠性问题。对近年来有关Sn-Pb、Sn-Ag、Sn-Ag-Cu、Sn-Bi和Sn-Zn等微互连焊点中金属原子的热迁移行为和关键问题进行综合分析,总结热迁移对微互连界面反应的影响,阐述金属原子热迁移的机理和驱动力,并归纳传递热Q*的计算方法及微互连焊点中主要金属元素的Q*值。最后,指出微互连焊点热迁移研究存在的主要问题,并对其未来研究发展趋势进行了展望。
[Abstract]:The increasing development of electronic products requires higher packaging density, better performance and smaller dimensions, which makes the power density of electronic devices significantly increase, thus causing a serious Joule heat problem.This will lead to a higher temperature gradient in the solder joint of microinterconnection which is the main heat dissipation channel which will induce the thermal transfer of metal atoms and cause serious reliability problems.The heat transfer behavior and key problems of metal atoms in Sn-PbSn-Sn-Ag-Cun-Bi and Sn-Zn micro-interconnect solder joints in recent years are comprehensively analyzed. The influence of heat transfer on the interfacial reaction of microinterconnection is summarized, and the mechanism and driving force of metal atom thermal migration are expounded.The calculation method of transfer heat Q * and the Q * value of the main metal elements in the micro interconnect solder joint are also summarized.Finally, the main problems in the study of thermal transport of micro-interconnect solder joints are pointed out, and the development trend of the research in the future is prospected.
【作者单位】：大连理工大学材料科学与工程学院;
【基金】：国家自然科学基金资助项目(51301030) 中央高校基本科研业务费专项资金项目(DUT14QY45)
【分类号】：TG40

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