镁合金化学机械抛光及材料去除机理研究

发布时间：2018-06-06 22:24

本文选题：化学机械抛光(CMP) + 镁合金　；参考：《江南大学》2015年硕士论文

【摘要】：镁合金所表现出的轻质、高阻尼性、抗振、高导热性、抗电磁干扰、高电负性和易于回收等性能优势能很好的扩大镁合金在工业上的应用。良好的机械性能,使得镁合金在航天、航空以及3C等领域得到了广泛的应用。但是镁合金硬度低、软的特性会导致其在加工中表面很容易出现划伤、磨损。尤其在某些关键或非常重要的精密零部件加工中常常需要达到高精度且无缺陷的表面效果,而化学机械抛光技术(Chemical Mechanical Polishing,CMP)作为一种超精密的表面处理技术,能够很好的实现超大平面的全局平坦化加工,达到近乎完美的镜面效果。本文旨在采用理论与试验相结合的方法,完成对镁合金化学机械抛光中抛光液、抛光工艺参数以及材料去除机理的深入研究。首先,本论文对抛光介质在镁合金化学机械抛光中的作用进行研究。结合镁合金自身特有理化性质,主要研究有机溶剂和无机溶剂作为抛光介质对镁合金抛光效果的影响。以表面粗糙度和材料去除率为评测标准发现:?有机溶剂作为抛光介质,虽然能够较好的改善镁合金表面抛光质量且表面点蚀现象较少,但对镁合金的材料去除率低;?以去离子水并添加适量缓蚀剂作为抛光介质,不仅能够很好的改善表面抛光质量(几乎没有点蚀出现),并且能够保证材料去除率适中。其次,本论文通过静态(镁合金静置于抛光液中)和动态(镁合金在抛光过程中)试验,分别研究了抛光液中不同缓蚀剂对镁合金基片表面耐腐蚀性以及抛光效果的影响。通过电化学试验以及镁合金表面膜层分析,得出缓释效果及其缓蚀机理,结合抛光试验比较得出最佳缓蚀剂及其含量。试验研究结果表明:采用Na2HPO4作为缓蚀剂,当添加量为1wt%时,缓蚀效果最佳且抛光后镁合金表面质量最好,无点蚀现象产生,充分证明了适量缓蚀剂能够有效地改善镁合金表面抛光质量。再者,本论文通过大量试验对影响镁合金化学机械抛光的主要参数进行了优化试验研究。基于化学机械抛光中的机械与化学作用并在本试验条件下,研究了抛光工艺参数(抛光压力、抛光盘转速、抛光液流量、抛光时间)、p H调节剂(无机碱、有机碱)、磨料种类以及磨料浓度对镁合金抛光效果的影响规律,以正交试验选出最佳工艺参数,并采用单因素试验进行了抛光液的配方优化。最终在本试验条件下,得到最佳的抛光工艺参数以及性能良好的镁合金化学机械抛光液。进一步研究了机械作用、化学作用以及化学与机械交互作用三者对镁合金材料去除的影响,并结合化学机械抛光中材料去除机理的二体和三体接触滑移模型,对其材料去除机理进行分析。研究结果表明:磨粒的机械作用是镁合金在化学机械抛光中材料去除的主要因素,且磨粒与抛光液的化学机械交互作用能够大幅度提高镁合金在化学机械抛光过程中的材料去除率。
[Abstract]:Magnesium alloys have the advantages of light quality, high damping, anti vibration, high thermal conductivity, anti electromagnetic interference, high electronegativity and easy recovery, which can greatly expand the application of magnesium alloys in industry. Good mechanical properties make magnesium alloys widely used in the fields of aerospace, aviation and 3C. However, the hardness of magnesium alloys is low and soft. Characteristics can lead to easy scratching and abrasion on the surface of the processing, especially in the processing of some key or very important precision parts, which often require high precision and non defective surface effects. The chemical mechanical polishing (Chemical Mechanical Polishing, CMP) can be used as a super precision surface treatment technology. The aim of this paper is to complete the study of polishing liquid, polishing process parameters and material removal mechanism in chemical mechanical polishing of magnesium alloy. First, the polishing medium is in chemical machinery of magnesium alloy. Combined with the special physical properties of magnesium alloy, the effect of organic solvent and inorganic solvent on the polishing effect of magnesium alloy was mainly studied by organic solvent and inorganic solvent. The surface roughness and material removal rate were found as the evaluation criteria: organic solvent was used as polishing agent, although it could improve the surface polishing of magnesium alloy. Light mass and surface pitting are less, but the material removal rate of magnesium alloys is low. Using deionized water and adding a proper amount of corrosion inhibitor as polishing medium, the surface polishing quality is improved (almost no pitting), and the material removal rate is suitable. Secondly, this paper is static (magnesium alloy static in polishing). The effect of different inhibitors on the corrosion resistance and polishing effect of magnesium alloy substrate on the surface of magnesium alloy was studied. The effect of slow release and corrosion inhibition was obtained by the electrochemical test and the analysis of the surface film layer of magnesium alloy. The best corrosion inhibitor was obtained by comparing with the polishing test. The test results show that Na2HPO4 is used as a corrosion inhibitor and when the addition of 1wt% is the best corrosion inhibition effect and the surface quality of magnesium alloy after polishing is the best, no pitting phenomenon is produced. It is proved that a proper amount of corrosion inhibitor can effectively improve the surface polishing quality of magnesium alloy. Furthermore, this paper has influenced magnesium alloy by a large number of experiments. The main parameters of chemical mechanical polishing were optimized. Based on the mechanical and chemical effects of chemical mechanical polishing, the polishing process parameters (polishing pressure, rotating speed of discs, flow of polishing liquid, polishing time), P H regulator (inorganic alkali, organic base), type of abrasive and the concentration of abrasive to magnesium were studied. The best process parameters were selected by orthogonal test, and the formulation of the polishing liquid was optimized by single factor test. The optimum polishing process parameters and chemical mechanical polishing liquid of magnesium alloy were obtained under the test conditions. The mechanical, chemical and chemical effects were studied further. The effect of the interaction of three on the removal of magnesium alloy material and the material removal mechanism of the material removal mechanism in chemical mechanical polishing is combined with the two body and the three body contact slip model. The mechanism of the material removal is analyzed. The results show that the mechanical effect of the abrasive particles is the main factor of the material removal in the chemical machinery polishing. The chemical mechanical interaction of the polishing solution can greatly improve the material removal rate of the magnesium alloy during the chemical mechanical polishing process.
【学位授予单位】：江南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TG174.4;TG146.22

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