SiC单晶片加工过程中切割力的分析与建模
发布时间：2018-07-17 04:17
【摘要】：SiC单晶具有优良的物理和机械性能,在微电子和光电领域得到了广泛应用,然而由于其高硬度和脆性,晶片的制造非常困难、效率低下。为提高SiC单晶片的加工质量和加工效率,分析了SiC单晶片线锯切割过程中的受力情况;从切屑变形和摩擦两个方面,建立单颗磨粒的法向和切向受力模型,进而得到线锯切割力与工艺参数及线锯物理属性的关系模型;设计了切割力的试验装置,通过不同加工参数下的试验研究,确定了关系模型中的应力系数;通过理论值与试验值的对比校验,法向力和切向力预测值的误差小于9.18%,并对误差产生原因作了分析。结果表明,该切割力理论模型可以对SiC单晶片在同等线锯切割环境下的切割力进行有效预测,为切削力的优化控制提供了理论依据。
[Abstract]:Sic single crystals have been widely used in the fields of microelectronics and optoelectronic because of their excellent physical and mechanical properties. However, because of their high hardness and brittleness, the fabrication of sic wafers is very difficult and inefficient. In order to improve the machining quality and machining efficiency of sic single crystal chip, the stress situation during the cutting process of sic single crystal chip wire saw was analyzed, and the normal and tangential stress models of single abrasive grain were established from two aspects of chip deformation and friction. Then the relationship model of cutting force with process parameters and physical properties of wire saw is obtained, and the test device of cutting force is designed, and the stress coefficient in the model is determined by the experimental research under different machining parameters. The error of normal force and tangential force prediction value is less than 9.18 by comparing the theoretical value with the experimental value, and the cause of error is analyzed. The results show that the cutting force of sic single crystal chip under the same cutting environment can be effectively predicted by the theoretical model, which provides a theoretical basis for optimal control of cutting force.
【作者单位】： 西安理工大学机械与精密仪器工程学院;
【基金】：国家自然科学基金(51175420,61402361) 陕西省自然科学基础研究计划(2012JQ9005) 陕西省重点实验室基金(11JS074) 陕西省教育厅专项科研计划(14JK1529)资助项目
【分类号】：TG48;TN304.24
[Abstract]:Sic single crystals have been widely used in the fields of microelectronics and optoelectronic because of their excellent physical and mechanical properties. However, because of their high hardness and brittleness, the fabrication of sic wafers is very difficult and inefficient. In order to improve the machining quality and machining efficiency of sic single crystal chip, the stress situation during the cutting process of sic single crystal chip wire saw was analyzed, and the normal and tangential stress models of single abrasive grain were established from two aspects of chip deformation and friction. Then the relationship model of cutting force with process parameters and physical properties of wire saw is obtained, and the test device of cutting force is designed, and the stress coefficient in the model is determined by the experimental research under different machining parameters. The error of normal force and tangential force prediction value is less than 9.18 by comparing the theoretical value with the experimental value, and the cause of error is analyzed. The results show that the cutting force of sic single crystal chip under the same cutting environment can be effectively predicted by the theoretical model, which provides a theoretical basis for optimal control of cutting force.
【作者单位】： 西安理工大学机械与精密仪器工程学院;
【基金】：国家自然科学基金(51175420,61402361) 陕西省自然科学基础研究计划(2012JQ9005) 陕西省重点实验室基金(11JS074) 陕西省教育厅专项科研计划(14JK1529)资助项目
【分类号】：TG48;TN304.24
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相关期刊论文 前1条
1 高玉飞;葛培琪;李绍杰;;往复式电镀金刚石线锯切割单晶硅片特性研究[J];人工晶体学报;2009年02期
【共引文献】
相关期刊论文 前10条
1 何健;徐中民;宋丽;王R，
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