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通过测量晶格畸变研究Si和Cu对Al-Si合金电导率的影响

发布时间:2018-10-05 20:17
【摘要】:通过电导率测量、金相观察、扫描电镜分析(SEM)和X线衍射分析(XRD),研究Si和Cu对Al-Si系合金晶格常数和电性能的影响规律。研究结果表明:随着Si和Cu质量分数的增大,Al基体晶格畸变程度增大,Al-Si合金电导率下降;Cu对Al-Si合金电导率的影响比Si对合金电导率的影响显著;经过450℃×5 h+250℃×2 h热处理工艺,Al基体晶格畸变程度明显降低,Al-Si合金电导率明显提高,增幅最高可达32.36%;Si和Cu对Al-Si合金电导率的影响机制不同,Si质量分数的变化对Al基体晶格畸变程度影响较小,Si对Al-Si合金电导率的影响可依据复合材料电阻率计算公式推导,而Cu的影响可根据Al晶格常数偏离量来推导。
[Abstract]:The effects of Si and Cu on the lattice constants and electrical properties of Al-Si alloys were studied by means of conductivity measurement, metallographic observation, scanning electron microscopy (SEM) and X-ray diffraction (XRD),) analysis. The results show that with the increase of mass fraction of Si and Cu, the lattice distortion degree of Al matrix increases and the conductivity of Al-Si alloy decreases. The effect of Cu on the conductivity of Al-Si alloy is more significant than that of Si on the conductivity of Al-Si alloy. After 450 鈩,

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