不同硅含量铝合金的微弧氧化及膜层特性研究

发布时间：2018-10-16 19:54

【摘要】：分别对含硅量为0.5%、5.0%、9.0%和12.0%的4种铝合金在不同微弧氧化(MAO)模式下处理15 min的成膜过程、膜层特征及能耗等进行了研究,通过SEM、EDS、XRD等对膜层进行了表征.结果表明:恒流条件下,随基体中硅含量的增加,合金的正向电压上升速率逐渐减缓,起弧前的等待时间显著延长,起弧电压和放电反应阶段的电压值也逐渐减小,膜层的平均生长速率明显下降,膜层表面的放电通道孔数目逐渐增多;恒压条件下,基体中硅含量对铝合金MAO的影响相对较弱,当硅元素增加时,合金的正、负向电流密度均逐渐增大,膜层的生长速率渐渐减小,但它们的表面形貌相差较小;各Al-Si合金在恒流和恒压两种MAO模式下生成的膜层均主要由γ-Al2O3、α-Al2O3及莫来石组成,且随基体中硅的增加,Al2O3的含量逐渐下降;相同MAO模式下,各合金生成的膜层的单位体积能耗值随其Si含量的增加而逐渐增大;此外,同种Al-Si合金在不同氧化模式下制得的MAO膜层的特征及能耗差异较大.
[Abstract]:The film-forming process, film characteristics and energy consumption of four kinds of aluminum alloys containing 0.5% and 12.0% Si in different micro-arc oxidation (MAO) modes for 15 min were studied, respectively. The films were characterized by SEM,EDS,XRD. The results show that under constant current condition, with the increase of silicon content in the matrix, the rising rate of the forward voltage of the alloy decreases gradually, the waiting time before starting arc is prolonged significantly, and the voltage of the starting arc voltage and the discharge reaction phase decrease gradually. The negative current density increased gradually and the growth rate of the film gradually decreased, but the surface morphology of each Al-Si alloy was smaller, and the films formed in constant current and constant voltage MAO modes were mainly composed of 纬-Al2O3, 伪-Al2O3 and mullite. With the increase of silicon content in the matrix, the content of Al2O3 decreases gradually, and the unit volume energy consumption of the film layer increases with the increase of Si content in the same MAO mode. The characteristics and energy consumption of MAO films prepared by the same Al-Si alloy under different oxidation modes are quite different.
【作者单位】：华南理工大学材料科学与工程学院;
【基金】：广东省自然科学基金资助项目(S2013010015211) 华南理工大学中央高校基本科研业务费专项资金资助项目(2012ZZ0011)~~
【分类号】：TG174.4

【参考文献】