线性离子束制备DLC薄膜的结构和性能

发布时间：2018-12-30 22:01

【摘要】：为研究线性离子束技术在不同基体材料上沉积DLC薄膜的结构和性能,分别在YG6硬质合金、SKD11不锈钢和T7451铝合金表面沉积DLC(类金刚石)薄膜,并采用Cr作为过渡层,缓解膜基不匹配性。通过原子力显微镜、台阶仪和Raman光谱研究薄膜的表面形貌和微观结构;利用划痕仪和摩擦磨损试验机对薄膜膜基结合强度及耐磨性进行测试。结果表明:采用该技术制备的DLC薄膜均匀光滑,表面粗糙度Ra仅为5.5nm;DLC/Cr/SKD11膜系的ID/IG值低于DLC/Cr/YG6膜系和DLC/Cr/T7451膜系,说明沉积于SKD11表面的DLC含有较多的sp3 C;DLC/Cr/SKD11和DLC/Cr/T7451膜系膜基结合强度为42.2N和23.2N,而DLC/Cr/YG6膜系在120N载荷范围内未有明显破损脱落,结合强度最好;DLC/Cr/YG6膜系摩擦因数(0.09)小于DLC/Cr/SKD11膜系(0.14)和DLC/Cr/T7451膜系(0.32),说明其具有较好耐磨性能。由此看出,不同基体上制备的DLC薄膜结构不同,结合强度和耐磨性也有所差别。
[Abstract]:In order to study the structure and properties of DLC films deposited on different substrates by linear ion beam technique, DLC (diamond-like carbon) films were deposited on YG6 cemented carbide, SKD11 stainless steel and T7451 aluminum alloy respectively, and Cr was used as the transition layer. To alleviate the mismatch of membrane base. The surface morphology and microstructure of the films were studied by atomic force microscope (AFM), step analyzer and Raman spectroscopy, and the adhesion strength and wear resistance of the films were measured by scratch tester and friction and wear tester. The results show that the DLC thin films prepared by this technique are uniform and smooth, and the surface roughness Ra is only 5.5 nm. The ID/IG value of DLC/Cr/SKD11 film system is lower than that of DLC/Cr/YG6 film system and DLC/Cr/T7451 film system, indicating that DLC deposited on the surface of SKD11 contains more sp3 C; The binding strength of DLC/Cr/SKD11 and DLC/Cr/T7451 was 42.2 N and 23.2N, while that of DLC/Cr/YG6 film was not obviously damaged and shedded in the range of 120N, and the binding strength was the best. The friction coefficient of DLC/Cr/YG6 film system (0.09) is lower than that of DLC/Cr/SKD11 film system (0.14) and DLC/Cr/T7451 film system (0.32). The results show that the structure of DLC films on different substrates is different, and the bonding strength and wear resistance are also different.
【作者单位】：南京理工大学机械工程学院;
【基金】：国家自然科学基金(51275247) 江苏省高校优势学科建设工程资助项目
【分类号】：TG174.444

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