三维垂直结构阻变存储器架构和电路关键问题研究

发布时间：2018-01-10 14:28

本文关键词：三维垂直结构阻变存储器架构和电路关键问题研究　出处：《复旦大学》2013年硕士论文　论文类型：学位论文

【摘要】：随着集成电路需要处理数据量的不断增加,数据的存储变得异常重要,对分立式高密度存储器的市场需求也越来越大。目前较为成熟的分立式高密度存储技术是NAND Flash(闪存),但由于Flash有着微缩瓶颈,不能很好的随工艺代发展而不断微缩。因此急需一种新型高密度存储器来满足日趋强烈的高容量存储需求。 RRAM(阻变存储器)存储介质一般是金属氧化物,工艺制造简单,有着很好的随工艺代不断微缩的优势,已成为业内专家们的研究热点。为了与三维NAND Flash在存储密度上相竞争,三维垂直结构RRAM(3D Vertical RRAM)被提出,但3D Vertical RRAM仍存在许多待解决问题：高密度架构的确定,大IR Drop(电压降)问题,Disturbance问题,大阵列过长选通延时问题,功耗问题等。本文针对其存在的这些问题进行了详细分析,并提出了相应解决方案。提出低IR Drop的3D Shunting Vertical RRAM架构,采用并行操作方式以获得与NAND Flash相竞争的操作带宽。并使用Ref-Cell-Read和Set/Reset-Verify方案进一步抑制IR Drop对read和set/reset操作过程可靠性的影响。应对Disturbance(干扰)的问题大阵列过长选通延时问题分别提出2D1R方案和Tick-tuck方案。最后对提出架构的功耗进行了分析,并提出了对一些工艺参数的要求。
[Abstract]:With the increasing amount of data needed to be processed by integrated circuits, the storage of data becomes extremely important. The market demand for discrete high-density memory is also increasing. At present, the more mature discrete high-density storage technology is NAND Flash (flash memory), but because of the Flash has a micro-bottleneck. It can not be very good with the development of technology, so a new type of high-density memory is urgently needed to meet the growing demand for high-capacity storage. RRAM (resistive memory) storage medium is generally metal oxide, the process is simple, and has the advantage of continuous shrinking with the process. In order to compete with 3D NAND Flash in storage density. 3D vertical structure RRAM(3D Vertical Ram is proposed, but 3D Vertical RRAM still has many problems to be solved: the determination of high density architecture. The problem of large IR Dropis Disturbance problem, the problem of long gate delay of large array, the problem of power consumption, etc. In this paper, the existence of these problems are analyzed in detail. The corresponding solution is put forward, and the 3D Shunting Vertical RRAM architecture with low IR Drop is proposed. Using parallel operations to obtain access to NAND. Flash competing operating bandwidth. Further suppression of IR using Ref-Cell-Read and Set/Reset-Verify schemes. The effect of Drop on the reliability of read and set/reset operation process. Finally, the power consumption of the proposed architecture is analyzed, and the 2D1R scheme and the Tick-tuck scheme are proposed respectively. The requirements of some technological parameters are also put forward.
【学位授予单位】：复旦大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TP333

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