预热处理温度对低温制备Mn掺杂ZnO薄膜结构和阻变性能的影响

发布时间：2018-01-11 23:35

本文关键词：预热处理温度对低温制备Mn掺杂ZnO薄膜结构和阻变性能的影响　出处：《兵器材料科学与工程》2015年02期 　论文类型：期刊论文

【摘要】：以水合乙酸锌、水合乙酸锰为前驱体,利用溶胶-凝胶旋涂法在p+-Si衬底上制备Mn掺杂的ZnO阻变薄膜(MZO)。研究工艺中预热处理温度对薄膜的微观结构、阻变特性的影响,分析了薄膜高阻态和低阻态的导电机理。结果表明:经250、300℃预热处理的MZO薄膜孔洞较多,而经350℃预热处理的MZO薄膜致密,无孔洞且呈c轴择优取向生长;经不同温度预热处理所制备的Ag/MZO/p+-Si器件均呈双极性的阻变特性,但经350℃预热处理的器件样品具有更显著的阻变行为和更高的高、低电阻比RHRS/RLRS(104~106);器件在高阻态的低压区为欧姆导电,高阻态高压区为肖特基发射电流传导,在低阻态为空间电荷限制电流(SCLC)传导。
[Abstract]:Hydrated zinc acetate, manganese acetate hydrate as a precursor for preparation of Mn doped ZnO resistance film on p+-Si substrate by sol-gel spin coating method (MZO). Research on preheating temperature on the microstructure of thin film process, impact resistance change characteristics, analyzed the conductive mechanism of thin film and high resistance low resistance state. The results show that the MZO film more holes of 250300 DEG C preheating treatment, while the dense MZO films of 350 DEG C preheating, no holes and a c axis preferred orientation growth by preheating treatment at different temperatures; the prepared Ag/MZO/p+-Si device showed a bipolar resistive characteristic, but by 350 DEG C preheating device samples have significantly more resistive behavior and higher resistance than high, low RHRS/RLRS (104~106); low pressure area device in a high impedance state for ohmic conduction, high resistance to high pressure zone Schottky emission current conduction in the low resistance state for space charge limited current (SCLC ) conduction.

【作者单位】：广西信息材料重点实验室桂林电子科技大学材料科学与工程学院;
【基金】：国家自然科学基金(51262003) 广西信息材料重点实验室基金(桂科能1110908-10-Z)
【分类号】：TP333
【正文快照】： 阻变存储器(RRAM)由于比传统的Flash存储有更快的读写速度、更高的存储密度、更低的功耗、更长的数据保持时间及与CMOS工艺兼容等优点,吸引了大批的科学家进行研究,且已有大量的具有电致阻变效应的介质材料的报道,如Ni O[1]、Zr O2[2]、Ti O2[3]、Sr Z-r O3[4]、La1-XSrXMn O3

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