无缝坏块处理与流水编程的NAND型内存控制器设计与实现

发布时间：2018-01-15 11:23

本文关键词：无缝坏块处理与流水编程的NAND型内存控制器设计与实现　出处：《国防科技大学学报》2015年01期 　论文类型：期刊论文

【摘要】：为满足航天大容量存储系统对高速存储及数据完整的需求,实现了一个基于NAND型内存的高性能控制器,提出了一种实现于NAND型内存芯片内部的流水编程机制,以及一种可以保证数据无缝连接的坏块处理机制。介绍了存储控制器的各个模块设计,并分析了不同情况编程机制所需的时间计算方法,建立仿真模型,利用蒙特卡洛方法仿真并讨论了流水编程机制的性能优化效果。在实际硬件平台验证了流水编程机制和坏块处理机制,结果表明该大容量存储系统的存储速率可达100MB/s,读取数据与存入数据保持一致,数据无乱序无丢失。
[Abstract]:In order to meet the requirement of high-speed storage and data integrity in space mass storage system, a high performance controller based on NAND memory is implemented. This paper presents a income programming mechanism which is implemented in the NAND memory chip and a bad block processing mechanism which can guarantee the seamless connection of the data. The design of each module of the memory controller is introduced. The time calculation method of different programming mechanism is analyzed and the simulation model is established. The performance optimization effect of income programming mechanism is simulated and discussed by Monte Carlo method. The income programming mechanism and the bad block processing mechanism are verified on the actual hardware platform. The results show that the storage rate of the large capacity storage system can reach 100 MB / s, the data read is consistent with the stored data, and the data is no disorder order and no loss.
【作者单位】：中国科学院空间科学与应用研究中心;中国科学院大学;
【基金】：中国科学院战略性先导科技资助项目(XDA04060300)
【分类号】：TP333
【正文快照】： 近年来,随着航天领域对大容量存储器研制工作的不断发展,与非型闪速存储器(no-andflash,NAND Flash)作为一种新兴的半导体存储介质,以其高密度、大容量、高数据存储速率以及可多次擦除等特点得到了大量的使用,逐步成为航天电子系统存储介质的主流选择[1-2]。文献[3]基于NAND F

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