应用于嵌入式闪存的电荷泵系统的研究

发布时间：2018-01-19 15:23

本文关键词： Flash存储器 Dickson电荷泵四相位电荷泵交叉耦合电荷泵　出处：《西安电子科技大学》2013年硕士论文　论文类型：学位论文

【摘要】：Flash存储器目前是非挥发性存储器电路中最重要的一种。在过去的十几年里，它广泛的应用于各种便携式电子产品中。Flash存储器的编程和擦除机制主要包括两种：热电子注入（CHE）以及FN隧穿效应，这两种操作一般都需要很高的电压去完成。电荷泵电路作为片内的高压产生电路是Flash存储器系统中必不可少的组成部分。电荷泵电路是一种由电容和开关阵列组成的可以在片上集成的DC-DC转换器。本文首先回顾了各种不同类型的电荷泵电路，然后重点介绍了应用广泛的传统Dickson电荷泵，分析了Dickson电荷泵的稳态特性和动态特性并且推导出了输出电压，上升时间等重要参数的公式。为了满足整个Flash存储器芯片的要求，本论文设计了一种基于四相位电荷泵的电荷泵系统，包括电荷泵核，压控振荡器，，四相位时钟发生器，比较器以及稳压电路。同时对各个子电路模块以及整个电荷泵系统进行了仿真，结果显示该电荷泵系统达到了整个Flash存储器的设定要求。为了进一步提高电荷泵系统的效率，本文又设计了一种基于交叉耦合型倍压器的电荷泵并完成了相应的仿真，然后在本文中对交叉耦合型电荷泵和四相位电荷泵的性能进行了对比。最后，本文采用宏力半导体0.13μmCMOS工艺完成了四相位电荷泵系统的版图设计，并且给出了整个Flash芯片的版图。
[Abstract]:Flash memory is currently one of the most important non-volatile memory circuits. It is widely used in various portable electronic products. Flash memory programming and erasure mechanisms mainly include two types: hot electron injection (che) and FN tunneling effect. The charge pump circuit is an indispensable part of the Flash memory system as a high voltage generation circuit. Charge pump circuit is a kind of DC-DC converter composed of capacitors and switch arrays that can be integrated on a chip. In this paper, various types of charge pump circuits are reviewed. Then the conventional Dickson charge pump which is widely used is introduced. The steady and dynamic characteristics of the Dickson charge pump are analyzed and the output voltage is derived. Formula for important parameters such as rise time. In order to meet the requirements of the whole Flash memory chip, this paper designs a charge pump system based on four-phase charge pump, including charge pump core, voltage-controlled oscillator, four-phase clock generator. The comparator and the voltage stabilizer circuit are also simulated. At the same time, each sub-circuit module and the whole charge pump system are simulated. The results show that the charge pump system can meet the requirements of the whole Flash memory, in order to further improve the efficiency of the charge pump system. In this paper, a charge pump based on cross coupling multiplier is designed and simulated. Then, the performance of cross coupling charge pump and four phase charge pump are compared in this paper. Finally, the layout design of the four-phase charge pump system is completed by using the macro force semiconductor 0.13 渭 mCMOS process, and the layout of the whole Flash chip is given.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TP333;TN432

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