面向嵌入式应用的阻变式存储器和动态随机存储器的测试表征及优化

发布时间：2018-01-27 07:11

本文关键词： 嵌入式系统阻变式存储器(RRAM) 动态随机存取存储器(DRAM) 表征及测试方法辐射　出处：《复旦大学》2012年硕士论文　论文类型：学位论文

【摘要】：近年来,随着大规模、超大规模集成电路的不断发展,嵌入式系统因其集成度高、运行速度快、功耗低、可靠性好等特点得到广泛应用。作为嵌入式系统硬件中不可或缺的组成部分,嵌入式存储器在半导体芯片中的作用非常重要,它的存储特性直接决定了整个系统的工作性能。随着数字、模拟电路的快速发展,为配合嵌入式系统整体性能的提升,各类新型的存储器也不断涌现出来。本文针对组内研发的阻变式存储器和两款新型的动态随机存取存储器在嵌入式系统中的应用需求,聚焦于单元存储性能的提升,以测试表征为手段,通过对实际芯片的测试反映出存储器芯片的运行效率和存储特性。之后,根据测试结果的统计和分析,从设计方法、工艺条件和编程算法三个角度对存储器的良率、数据保持时间、可制造性等方面进行了优化,以达到实际的应用需求。另外,本文还针对阻变式存储器芯片在辐射领域中的应用,对芯片的抗辐射能力进行研究和分析。与普通的应用环境相比,辐射会在器件内部产生额外的缺陷,影响器件的性能,甚至导致整个系统无法正常工作。因此,对于存储器在辐射领域的应用,需要提出一套能够表征辐照性能的参数以及相应的测试方法。从测试结果来看,现阶段的阻变存储单元具备了很好的抗辐射特性,但芯片的外围电路还需要引入必要的抗辐射措施进行加固。
[Abstract]:In recent years, with the continuous development of large-scale and VLSI, embedded systems have high integration, high speed and low power consumption. As an indispensable part of embedded system hardware, embedded memory plays an important role in semiconductor chips. With the rapid development of digital and analog circuits, all kinds of new types of memory are emerging in order to improve the overall performance of embedded system. Aiming at the application demand of resistive memory and two new types of dynamic random access memory in embedded system, this paper focuses on the improvement of cell storage performance by means of testing and characterization. Through the actual chip test reflects the memory chip operation efficiency and storage characteristics. Then, according to the test results statistics and analysis, from the design method. In order to meet the practical application requirements, the process conditions and programming algorithms are optimized in terms of memory yield, data retention time and manufacturability. In addition, aiming at the application of the resistive memory chip in the radiation field, the anti-radiation ability of the chip is studied and analyzed, which is compared with the common application environment. Radiation will cause additional defects in the device, affect the performance of the device, and even lead to the entire system can not work properly. Therefore, for memory applications in the field of radiation. It is necessary to propose a set of parameters that can characterize the radiation performance and the corresponding testing methods. From the test results, the resistive memory cells have good radiation resistance characteristics. But the peripheral circuit of the chip also needs to introduce the necessary anti-radiation measures to strengthen.
【学位授予单位】：复旦大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TP333

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