阻变存储器中的电场调控磁性研究

发布时间：2018-02-03 16:06

本文关键词： 金属氧化物阻变存储器 d~0磁性氧空位　出处：《山东大学》2017年硕士论文　论文类型：学位论文

【摘要】：目前,阻变随机存储器(RRAM)因为其优良的非易失性吸引了学术界的广泛关注,它不仅有很好的尺寸缩减潜力,还具有高密度、低能耗、高速度、持久的保持性等优点,是新型非易失性存储器的候选者。而在自旋电子学领域,电控磁研究备受关注,研究者们在金属、多铁材料、稀磁半导体等材料中都发现了电控磁现象。电阻转变与磁性的耦合就是一个典型的电控磁例子,在电场的作用下,实现对器件电阻与磁性的双重控制。如果将电阻转变和磁性转变集成在一个器件中,就可以远远地提高数据的存储密度,实现数据的多级存储。本论文主要进行了如下研究:1、利用脉冲激光沉积(PLD)镀膜技术制备了以二氧化铪为阻变层的Ag/HfO2/Pt阻变存储器。对器件的电阻转变特性及电控磁行为进行了测量,通过一系列的实验研究,我们在器件中发现了明显的多级电阻转变行为,伴随着多级阻变,器件的铁磁性也出现了变化。多级电阻转变与磁电耦合是由两种机制共同控制的:Ag导电细丝机制与氧空位导电细丝机制。2、利用磁控溅射(Magnetron sputtering)镀膜技术制备了 Ta/ZnO/Pt阻变存储器件。利用直流电压扫描方式对器件的电阻转变以及电控磁行为进行测量,器件表现出典型的双极电阻转变行为,并且观察到了磁电耦合现象。在外加电压的作用下,存储介质ZnO薄膜中的氧空位浓度发生变化,促进氧空位导电细丝的形成与湮灭,同时,ZnO/Pt界面的势垒高度发生变化,从而导致器件的电阻与磁性同时发生变化。3、利用磁控溅射镀膜技术制备了 Ta/Sn02/Pt阻变存储器件。对器件的电阻转变行为以及电场调控磁性行为进行了测量,器件表现出典型的双极电阻转变行为,并且在正电压方向出现了多级电阻转变,器件的磁性也伴随着电阻转变表现出多级变化。电阻转变与磁性转变存在两种机制:肖特基势垒机制与氧空位导电细丝机制。
[Abstract]:At present, resistive random access memory (RRAM) has attracted extensive attention of academia because of its excellent non-volatile property. It not only has good size reduction potential, but also has high density, low energy consumption and high speed. In the field of spin electronics, the research of electronic-controlled magnetics has attracted much attention, and researchers are in the field of metal and multi-iron materials. Electronic-controlled magnetic phenomena have been found in dilute magnetic semiconductors. The coupling of resistance transition and magnetism is a typical example of electrically controlled magnetic field under the action of electric field. The dual control of the resistance and magnetism of the device is realized. If the resistance transition and the magnetic transition are integrated into one device, the storage density of the data can be greatly increased. In this paper, we mainly do the following research: 1. The Ag/HfO2/Pt resistive memory with hafnium oxide as the resistor layer was prepared by pulsed laser deposition (PLD) coating technology. The resistance transition characteristics and the electronic-controlled magnetic behavior of the device were measured. Through a series of experimental studies, we found obvious multistage resistance transition behavior in the device, accompanied by multistage resistance. Multistage resistance transition and magnetoelectric coupling are two kinds of mechanisms which are controlled by two mechanisms: 1: AG conductive filament mechanism and 2. 2 oxygen vacancy conductive filament mechanism. Magnetron sputteringusing magnetron sputtering. The Ta/ZnO/Pt resistive memory device was fabricated by coating technology. The resistance transition and the electronic-controlled magnetic behavior of the device were measured by DC voltage scanning method. The device exhibits typical bipolar resistance transition behavior, and magnetoelectric coupling phenomenon is observed. The oxygen vacancy concentration in the ZnO thin film is changed under the action of applied voltage. It can promote the formation and annihilation of oxygen vacancy conductive filament, and change the barrier height of ZnO / Pt interface, which leads to the change of resistance and magnetism of the device. 3. Ta/Sn02/Pt resistive memory devices were fabricated by magnetron sputtering coating technique. The resistance transition behavior and the electric field controlled magnetic behavior of the devices were measured. The device exhibits typical bipolar resistance transition behavior and multistage resistance transition in the positive voltage direction. There are two mechanisms of resistance transition and resistance transition: Schottky barrier mechanism and oxygen vacancy conducting filament mechanism.
【学位授予单位】：山东大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TP333

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