有机二极管电存储器件及其机理研究

发布时间：2018-02-10 17:21

本文关键词： 有机二极管存储器存储机制聚乙烯基咔唑氧化石墨烯聚甲基丙烯酸甲酯　出处：《南京邮电大学》2013年硕士论文　论文类型：学位论文

【摘要】：有机二极管电存储器具有结构简单并且可设计性强，可以薄膜化，可以通过三维堆叠提高存储密度，可以弯曲折叠等众多优点。有机二极管电存储器作为替换或补充现有的无机半导体存储技术的下一代数据存储技术具有极大的研究价值和经济前景。但是目前有机二极管电存储器研制工作还处于起步阶段，存储器件性能稳定性以及存储机制等问题亟待解决。因此设计制备存储性能稳定的器件并对其存储机制深入研究具有重要意义。本论文设计制备了一系列存储性能稳定的二极管器件并对其各自的工作机制进行了详细探讨，为具有普适性、可定量描述有机二极管存储机制的物理模型提出，引导器件设计，，实现有机二极管电存储器量产，提供了技术铺垫。（1）具有非易失性一次写入多次读取存储功能的二极管电存储器件Indium TinOxide/poly(N-vinylcarbazole)/SiO_2nanoparticles/poly(N-vinylcarbazole)/Aluminium被成功设计制备。二氧化硅纳米粒在器件中的应用使得器件在较低电压下的开关电流比从20增大到了700，并且在较高电场下该器件还显示出负微分电阻现象。对比发现两层聚乙烯基咔唑材料薄膜之间的二氧化硅纳米粒尺寸对提高该存储器件的重复性以及开态信息维持时间具有重要作用。通过该存储器件的电流与电压特性关系进行理论模型拟合和器件结构扫描电子显微镜表征对其存储机制进行了研究，而其负微分电阻效应的强度仅与聚乙烯基咔唑材料薄膜界面上的缺陷和电荷陷阱有关，因此植入更多电荷陷阱在聚乙烯基咔唑材料薄膜中就可以扩大负微分电阻效应。（2）研究了Indium Tin Oxide/Graphene Oxide/Aluminium结构二极管器件存储特性，发现器件几何结构和铝电极厚度不同则器件存储行为也会不同。当铝电极相对较厚时交叉点阵中器件显示出三阶存储效应，而对应的交叉条形阵列中器件表现出了静态随机存储特性。当铝电极厚度较薄时，上述器件均具有闪存特性。该二极管结构器件不同存储行为归因于氧化石墨烯薄膜的氧化还原模式和程度不同所导致。（3）研究了本课题组合成的小分子材料以及商业化的聚甲基丙烯酸甲酯材料的二极管电存储特性，“电极/有机小分子/电极”结构中不同电极、器件阵列和保护电流限制均会导致不同存储特性。对Indium Tin Oxide/Polymethylmethacrylate/Aluminium结构二极管器件研究发现具有稳定的闪存特性，器件中聚甲基丙烯酸甲酯材料薄膜的扫描电子显微镜图像显示出有较多微孔分布，对比得出微孔是导致该器件实现闪存的主要原因。
[Abstract]:Organic diode electric memory has simple structure and strong designability. It can be thinned, and can increase the storage density by three dimensional stacking. The next generation data storage technology which can replace or supplement the existing inorganic semiconductor storage technology has great research value and economic prospect. The development of a machine diode electric memory is still in its infancy. The performance stability and storage mechanism of memory devices need to be solved urgently, so it is of great significance to design and fabricate devices with stable storage performance and to study the storage mechanism in depth. In this paper, a series of diode devices with stable storage performance are designed and fabricated, and their respective working mechanisms are discussed in detail. Guide device design, achieve organic diode storage mass production, provide a technical cushion. 1) Indium TinOxide/poly(N-vinylcarbazole)/SiO_2nanoparticles/poly(N-vinylcarbazole)/Aluminium, a diode electrical memory device with nonvolatile one-write multiple read memory function, has been successfully designed and fabricated. The application of silica nanoparticles in the device has resulted in the switching current ratio of the device from 20 to 20 at lower voltage. The device also showed negative differential resistance at high electric field. It was found that the size of silica nanoparticles between the two layers of polyvinylcarbazole films could improve the repeatability of the device; and. The on-state information maintenance time plays an important role. The storage mechanism is studied by theoretical model fitting and scanning electron microscope (SEM) characterization of the current and voltage characteristics of the device. However, the intensity of negative differential resistance effect is only related to the defects and charge traps at the interface of polyethylene based carbazole film, so the negative differential resistance effect can be expanded by embedding more charge traps in polyethylene based carbazole film. (2) the storage characteristics of Indium Tin Oxide/Graphene Oxide/Aluminium diodes are studied. It is found that the device storage behavior is different when the geometry of the device and the thickness of the aluminum electrode are different. When the aluminum electrode is relatively thick, the device displays the third-order storage effect in the intersecting dot array. The devices in the corresponding cross-bar array exhibit static random storage characteristics. When the thickness of the aluminum electrode is thin, The different storage behaviors of the diodes are attributed to the different redox modes and degrees of graphene oxide films. The diode storage characteristics of small molecular materials and commercial poly (methyl methacrylate) materials have been studied. Different electrodes in the structure of "electrode / organic small molecule / electrode" have been studied. Both device array and protection current limitation can lead to different storage characteristics. For Indium Tin Oxide/Polymethylmethacrylate/Aluminium diode devices, it is found that they have stable flash memory characteristics. The scanning electron microscope images of the poly (methyl methacrylate) film show that there are many micropores in the device, and it is found that the micropore is the main reason for the device to achieve flash memory.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TN31;TP333

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