ECM型阻变存储器的建模与仿真

发布时间：2018-02-14 04:45

本文关键词： 非挥发性存储器阻变存储器阻变机制建模仿真　出处：《西安电子科技大学》2014年硕士论文　论文类型：学位论文

【摘要】：随着便携式移动多媒体电子产品的蓬勃发展,非挥发性存储器Flash迅速占据了存储芯片的绝大部分市场。但是根据摩尔定律,特征尺寸在不断缩减,在进入20nm技术节点之后,Flash存储器由于其物理局限性正面临着严峻的挑战。业界普遍认为16nm-3D技术将会是Flash存储器最后的舞台。为了应对危机,多种类型的新型存储器,如铁电存储器(FeRAM)、相变存储器(PRAM)、磁阻存储器(MRAM)以及阻变存储器(RRAM)应运而生。其中RRAM由于其结构简单,操作速度快,可等比缩小至纳米量级,与CMOS工艺兼容等诸多优点,对高集成、低功耗技术要求极具吸引力。特别是基于二元金属氧化物的RRAM研究已然成为研究的焦点,而且也被认为是新一代非挥发性存储器的最有力竞争者。但是目前针对RRAM的研究还未成熟,在阻变机制方面没有统一的理论,器件的耐久性、一致性等都表现较差,需要大量研究。本文主要根据目前的研究现状,针对RRAM的阻变机制进行了两方面的研究。其一是,根据业内普遍认可的电化学型(ECM)导电细丝机制,结合前人的一些研究成果,开展了一个完整的用于描述ECM单元阻变行为的数学模型研究。对ECM单元的SET和RESET过程中电流电压的变化、导电细丝的生长以及溶解过程进行了详细描述。第二部分内容是针对所建立的数学模型,采用MATLAB工具对模型中的不同参数进行仿真,如SET和RESET过程的电流电压、隧穿间隙的变化,不同电极材料对阻变I-V特性的影响等诸多内容。仿真工作一方面可以更加形象地理解RRAM的导电机制,验证模型的合理性;另一方面可以对实际RRAM存储器制备提出合理的建议、应该注意的因素等,以此来提高RRAM的特性。
[Abstract]:With the rapid development of portable mobile multimedia electronics, non-volatile memory (Flash) has rapidly taken over most of the market for memory chips. But according to Moore's Law, feature sizes are shrinking. After entering 20nm technology node, flash memory is facing severe challenge because of its physical limitation. It is widely believed that 16nm-3D technology will be the final stage of Flash memory. For example, ferroelectric memory (FeRAM), phase change memory (PRAM), magnetoresistive memory (MRAM) and resistive memory (RRAM) have come into being. Among them, RRAM has many advantages such as simple structure, fast operation speed, equal ratio can be reduced to nanometer order, compatible with CMOS process and so on, so it is highly integrated. Low-power technology is very attractive, especially RRAM based on binary metal oxides has become the focus of research. It is also considered to be the most powerful contender of the new generation of non-volatile memory. However, the research on RRAM is not yet mature, there is no unified theory in resistance mechanism, the durability and consistency of devices are poor. According to the current research situation, two aspects of the resistance mechanism of RRAM are studied in this paper. One is, according to the widely accepted electrochemistry type of RRAM, the mechanism of conducting filament, combined with some previous research results, A complete mathematical model for describing the resistive behavior of ECM cells is developed. The changes of current and voltage during the SET and RESET processes of ECM cells are investigated. The growth and dissolution process of the conductive filament are described in detail. The second part is to simulate the different parameters of the model by MATLAB tools, such as the current and voltage of SET and RESET process. The change of tunneling gap and the influence of different electrode materials on the resistance I-V characteristics and so on. On the one hand the simulation work can understand the conductive mechanism of RRAM more vividly and verify the rationality of the model. On the other hand, some reasonable suggestions and factors should be paid attention to for the preparation of actual RRAM memory, so as to improve the characteristics of RRAM.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TP333

【相似文献】