基于FinFET的SRAM结构研究

发布时间：2018-03-01 19:04

本文关键词： FinFET SRAM 静态噪声阈值SNM 动态功耗泄漏电流　出处：《浙江大学》2017年硕士论文　论文类型：学位论文

【摘要】：随着集成电路工艺逐渐缩小,在提高晶体管速度的同时也并行出现了一个很严重的问题,即短沟道效应。由于短沟道效应的影响,当晶体管缩减到纳米制程时,泄漏功耗不仅不减小,反而会持续增加。当前流行的FinFET结构可以大大减小短沟道效应的影响。存储器中的静态随机存储器SRAM是SoC系统中非常关键的部分,然而6管SRAM单元存在读操作破坏、读写稳定度低以及泄漏电流偏大等问题,因此先提出了 SRAM结构的分类以及各自的优缺点,然后对具有代表性的SRAM拓扑结构进行了详细的性能参数分析,得出由FinFET构成的SRAM单元的各项性能参数确实优于由平面CMOS晶体管构成的SRAM,同时根据得出的规律提出了一种新型的8管FinFET SRAM拓扑结构。这种8管SRAM单元使用了读端口隔离的设计思想,可以有效的提高读噪声阈值RNM。写操作部分使用了传输门的设计思想,可以提高写操作余量以及减小写延迟。同时,它的动态功耗在比较的SRAM结构中是最小的,比传统6管SRAM减小了近50%,远远小于经典8管SRAM。还有,泄漏电流也是比较的SRAM结构中最小的。这种新型SRAM单元可以使用在对读延迟要求不高的场合下。
[Abstract]:As the IC process gradually shrinks, a very serious problem arises at the same time of increasing the speed of transistors, that is, short channel effect. Because of the effect of short channel effect, when the transistor is reduced to nanometer process, The leakage power consumption will not be reduced, but will continue to increase. The current popular FinFET structure can greatly reduce the influence of short channel effect. The static random access memory (SRAM) in memory is a very important part of SoC system. However, there are some problems such as reading operation destruction, low read and write stability and large leakage current in the six-transistor SRAM cells. Therefore, the classification of SRAM structures and their advantages and disadvantages are proposed first. Then, the performance parameters of the typical SRAM topology are analyzed in detail. It is concluded that the performance parameters of the SRAM unit composed of FinFET are indeed superior to those of the SRAM composed of planar CMOS transistors, and a new 8-transistor FinFET SRAM topology is proposed according to the obtained rules. The 8-tube SRAM unit uses the read end. The design idea of mouth isolation, The write operation part uses the design idea of the transmission gate, increases the write operation margin and reduces the write delay. At the same time, its dynamic power consumption is the minimum in the compared SRAM structure. Compared with the traditional six-tube SRAM, it is nearly 50 times smaller than the classical 8-tube SRAM.The leakage current is also the smallest in the compared SRAM structure. This new type of SRAM cell can be used under the condition that the reading delay is not high.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TP333

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