基于PEDOT:PSS材料的阻变存储器的制备与性能研究

发布时间：2018-03-02 06:29

  本文关键词： PEDOT:PSS 阻变存储器 限流值 下电极 金属细丝　出处：《清华大学》2012年硕士论文　论文类型：学位论文

【摘要】：随着科技进步，人们对数据处理与存储的要求大幅度增加。阻变存储器很好地兼顾了DRAM和Flash的优点，同时具有非易失性和短小轻薄的特点，是一种应用前景广阔的非易失性存储器。基于有机材料的阻变存储器具有很多优势：成本低廉、工艺简单、易于大面积成膜以及制备可以弯曲的柔性器件等。PEDOT:PSS是一种稳定性好的环境友好型材料，在有机电子学的多个领域都有重要的应用。本文尝试利用磁控溅射技术和旋转涂覆工艺制备四类基于PEDOT:PSS有机薄膜的阻变存储器，并重点探讨了电阻转变机制以及影响存储性能的因素，取得了如下结果： 在Al/PEDOT:PSS/Al体系中观察到高达104的开关比以及在直流模式下超过103次的循环抗疲劳特性， Al/PEDOT:PSS/Al体系的电阻转变是由基于PEDOT氧化还原反应的导电细丝引起的。另外，通过改变限流值的大小可以实现对多个电阻转变参数的有效调节，并最终确定了Al/PEDOT:PSS/Al体系中电阻转变的临界限流值和RESET过程消耗的最小功率值。 通过比较Al/PEDOT:PSS/Al、FTO/PEDOT:PSS/Al和Pt/PEDOT:PSS/Al三类阻变存储体系，分析了底电极种类对阻变存储器的存储性能以及电阻转变种类的影响。 实验中成功发展了一类具有更长数据保持时间（106s）、更好的热稳定性（在25温℃~度16区0℃间内都有电阻转变特性）和小于2V的电压转变阈值的Al/PEDOT:PSS/Cu非易失性阻变存储器。通过TEM和EDX等手段发现纳米级铜导电细丝的存在，确定该器件的阻变机制为Cu导电细丝的氧化还原。综合利用XRD、XPS、DSC、TGA和SEM等技术分析得出Al/PEDOT:PSS/Cu阻变存储体系在180℃温度下电阻转变失效是由Cu上电极表面被氧化所引起的。
[Abstract]:With the development of science and technology, the demand for data processing and storage has been greatly increased. Resistive memory has the advantages of both DRAM and Flash, and has the characteristics of non-volatile and short and thin. Resistive memory based on organic materials has many advantages: low cost, simple process, Easy to form large area films and to fabricate flexible devices that can be bent. PEDOT: PSS is a kind of stable and environment-friendly material. This paper attempts to fabricate four kinds of resistive memory based on PEDOT:PSS organic film by using magnetron sputtering and rotating coating technology, which have important applications in many fields of organic electronics. The mechanism of resistance transition and the factors affecting storage performance are discussed. The results are as follows:. A switch ratio of up to 104 and cyclic fatigue resistance of more than 103times in DC mode have been observed in Al/PEDOT:PSS/Al system. The resistance transition of Al/PEDOT:PSS/Al system is caused by conducting filament based on PEDOT redox reaction. By changing the current limiting value, the effective adjustment of multiple resistance transition parameters can be realized, and the critical current limiting value of resistance transition in Al/PEDOT:PSS/Al system and the minimum power consumption of RESET process can be determined. By comparing three kinds of resistive storage systems, Al / PEDOT: PSS / PSS / Al and Pt/PEDOT:PSS/Al, the effects of the type of bottom electrode on the storage performance and the type of resistance transition of the resistive memory are analyzed. A class of Al/PEDOT:PSS/Cu with longer data retention time (106sg), better thermal stability (resistive transition characteristics in the temperature range of 25 鈩，

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