用于信息存储、逻辑运算和大脑神经功能模拟的忆阻型离子器件

发布时间：2018-03-10 23:39

  本文选题：离子器件　切入点：忆阻器　出处：《科学通报》2014年30期 　论文类型：期刊论文

【摘要】：在电场作用下阳离子或阴离子的传输导致离子导体电阻态的变化,是离子导体的一般性阻变机理.与现有的半导体器件相比,忆阻型离子器件有显著优点:离子器件作为存储器时其信息存储密度高、能耗低、擦写时间只需几纳秒;离子器件还可用于逻辑运算,这样未来的计算机将不受冯·诺依曼瓶颈的限制,信息的存储与处理将均可由离子器件完成.尤为重要的是,用离子器件构建的人工神经网络能够实现类似大脑的学习、记忆和遗忘等功能,美国国防高级研究计划署的SyNAPSE项目有望于2016年制造出与猫智力相当的人工大脑,该人工大脑的能耗约为1 kW,体积小于2 L,这将是人工智能领域的一场革命.纳米离子器件将在下一个信息时代发挥重要作用.
[Abstract]:Transmission in the electric field of cationic or anionic induced changes in ion conductor resistance state, is the general ion conductor resistance mechanism. Compared with the existing semiconductor devices, memristive devices have significant advantages: ion ion storage device as the information storage density, low energy consumption, erasing time just a few nanoseconds; ion devices can also be used for logic operations, so that future machines will not be affected by von Neumann bottleneck, information storage and processing can be completed by ion devices. Especially, the artificial neural network constructed by ion devices can achieve similar brain functions such as learning, memory and forgetting, the U.S. Defense advanced research projects the Department of the SyNAPSE project is expected to be in 2016 to create an artificial brain with cat intellectual equal, energy consumption of the artificial brain is about 1 kW, the volume is less than 2 L, it will be artificial intelligence collar A revolution in the domain. Nanoscale devices will play an important role in the next information age.

【作者单位】： 华中科技大学材料科学与工程学院;中国科学院物理研究所;中国科学院上海硅酸盐研究所 高性能陶瓷和超微结构国家重点实验室;
【基金】：国家自然科学基金(51372094)资助
【分类号】：TP333
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本文编号：1595567