阻变存储器发展现状

发布时间：2018-03-12 07:05

  本文选题：忆阻器　切入点：阻变存储器　出处：《国防科技》2016年06期 　论文类型：期刊论文

【摘要】：在纳米电子器件时代,来自量子隧穿和电容耦合等问题的挑战,使得Flash半导体存储器的发展遇到瓶颈。阻变存储器是忆阻器在二值情况下的特殊应用,因其结构简单、高密度、高速、低功耗、与CMOS工艺兼容以及具备三维集成能力,成为最具发展潜力的下一代非易失存储技术之一。在国内外学者的共同努力下,阻变存储器的研究已经取得了诸多突破性的进展。本文主要综述阻变存储器的发展历程、材料体系和阻变机理,并总结展望了阻变存储器进一步发展的优势和面临的挑战。
[Abstract]:In the era of nanoscale electronic devices, the challenges of quantum tunneling and capacitive coupling make the development of Flash semiconductor memory meet the bottleneck. Resistive memory is a special application in binary case, because of its simple structure and high density. High speed, low power consumption, compatible with CMOS process and the ability of 3D integration, become one of the most promising next generation non-volatile memory technologies. Many breakthroughs have been made in the research of resistive memory. In this paper, the development history, material system and mechanism of resistive memory are reviewed, and the advantages and challenges of the further development of resistive memory are summarized.
【作者单位】： 中国科学院微电子器件与集成技术重点实验室;国防科技大学电子科学与工程学院;
【分类号】：TP333
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本文编号：1600494