基于钛氧化物阻变存储阵列的制备与机理研究

发布时间：2018-03-13 11:25

本文选题：非易失性存储器　切入点：阻变器件　出处：《国防科学技术大学》2012年硕士论文　论文类型：学位论文

【摘要】：非易失存储器最大的优点在于不供电的情况下存储数据仍能保持很长一段时间。目前，占据主要市场份额的非易失性存储器是电容电荷型的闪存(Flash)。然而随着微电子工艺节点的不断推进，存储单元的尺寸逐渐变小，传统浮栅结构的Flash器件已达到严重的工艺技术瓶颈。Flash器件在尺寸缩小化的过程中出现了操作电压过大、操作速度缓慢、鲁棒性不好、功耗过高等缺点。因此，研究性能更加优越的新一代非易失性存储器迫在眉睫。近几年来，人们已经提出了许多有望取代Flash型存储器的新兴非易失存储器，如铁电存储器(FRAM)、磁存储器(MRAM)、相变存储器(PRAM)以及阻变存储器(RRAM)。其中，阻变存储器因其读写速度高、功耗低、集成度高、成本低，并兼容现代CMOS工艺等优势，引起了广大研究者的兴趣。本文将研究的注意力集中在具有典型阻变特性的钛氧化物材料上，通过制备16×16bits交叉阻变存储阵列，，研究了基于TiO2阻变单元的电学特性和物理机理，主要做了如下工作：（1）在介绍微纳米加工基本规律的基础上，制备出16×16bits的微纳米存储阵列，讨论和分析器件制备工艺过程中设备参数对器件形貌以及物理特性的影响。（2）在制备与测试TiO2阻变器件的基础上，研究TiO2阻变器件的物理参数与器件双稳态特性之间的关系，探索制备条件等外界环境对器件开关特性的影响。其中物理参数包括：金属电极材料、有效截面积、TiO2功能层；器件阻变特性包括：高低电阻比、操作电压、重复擦写次数、开关速度。
[Abstract]:The biggest advantage of non-volatile memory is that it can still store data for a long time without power supply. The non-volatile memory that dominates the market is the capacitive charge flash memory flash. However, as the microelectronics process nodes continue to advance, the size of the memory cell becomes smaller. Flash devices with traditional floating gate structure have reached a serious technological bottleneck. Flash devices have some disadvantages such as too large operating voltage, slow operation speed, poor robustness and high power consumption in the process of size reduction. It is urgent to study a new generation of non-volatile memory with better performance. In recent years, people have proposed many new non-volatile memory which are expected to replace Flash type memory. For example, ferroelectric memory (FRAM), magnetic memory (MRAM), phase change memory (PRAM) and resistive memory (RRAM). Among them, resistive memory has the advantages of high reading and writing speed, low power consumption, high integration, low cost, and compatible with modern CMOS technology, etc. This paper focuses on titanium oxide materials with typical resistive properties. By fabricating 16 脳 16 bits cross-resistive storage arrays, the electrical properties and physical mechanism of TiO2 resistive elements are studied. The main tasks are as follows:. 1) on the basis of introducing the basic rules of micro / nano machining, a 16 脳 16 bits micro / nano storage array is fabricated. The influence of device parameters on the morphology and physical properties of the device during the fabrication process is discussed and analyzed. Based on the fabrication and testing of TiO2 resistor devices, the relationship between the physical parameters of TiO2 resistor devices and the bistable characteristics of the devices is studied. The physical parameters include metal electrode material, effective cross section area and TiO2 functional layer, and the device resistance characteristics include: high / low resistance ratio, operating voltage, repetition rewriting times, etc. Switching speed.
【学位授予单位】：国防科学技术大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TP333

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