栅侧壁隔离层对45 nm NOR闪存栅极干扰的影响

发布时间：2018-03-20 22:54

  本文选题：栅极干扰　切入点：侧壁隔离层　出处：《半导体技术》2017年12期 　论文类型：期刊论文

【摘要】：为了研究侧壁隔离层对闪存器件可靠性的影响,分别制备了Si_3N_4和SiO_2-Si_3N_4-SiO_2-Si_3N_4(ONON)复合层作为栅侧壁隔离层的45 nm或非闪存(NOR flash)器件,对编程后、循环擦写后的闪存器进行栅极干扰的测试,讨论了不同栅侧壁隔离层对栅极干扰的影响。结果表明,虽然纯氧化硅隔离层可减少NOR自对准接触孔(SAC)刻蚀时对侧壁隔离层的损伤,但其在栅极干扰时在氧化物-氮化物-氧化物(ONO)处有更高的电场,从而在栅干扰后阈值电压变化较大,且由于在擦写操作过程中会陷入电荷,这些电荷在大的栅极电压和长时间的栅干扰作用下均会对闪存器的可靠性产生负面的影响。ONON隔离层的闪存器无可靠性失效。因此以ONON作为侧壁隔离层比以纯氮化硅作为侧壁隔离层的闪存器件具有更好的栅干扰性能。
[Abstract]:In order to study the effect of sidewall isolation layer on the reliability of flash memory devices, Si_3N_4 and SiO _ 2-Si3N _ 4-SiO _ 2-Si _ 3N _ 4-SiO _ 2-S _ 3N _ 4 / ONON composite layers were fabricated, respectively, as 45 nm or non-flash side wall isolating layers of gate side wall isolators. After programming, the gate interference of the circularly erased flash memory was tested. The effects of different gate side wall isolation layers on gate interference are discussed. The results show that although the pure silicon oxide insulator can reduce the damage to the side wall isolation layer during the etching of the NOR self-aligned contact hole, However, it has a higher electric field at the oxide nitride oxide Ono when the gate interferes, so the threshold voltage changes greatly after the gate interference, and because of the charge in the scribing operation, These charges have negative effect on the reliability of flash memory under the action of large gate voltage and long time gate interference. The flash memory in the ONON isolation layer has no reliability failure. Therefore, the ratio of ONON as side wall isolation layer to pure nitridation is used as the side wall isolation layer. The flash memory device with silicon as the side wall insulator has better gate interference performance.
【作者单位】： 中芯国际集成电路制造有限公司;
【分类号】：TP333
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本文编号：1641155