Flash产品Slash Issue的研究

发布时间：2018-03-26 08:12

本文选题：闪速存储　切入点：光刻　出处：《天津大学》2013年硕士论文

【摘要】：自从上个世纪八十年代半导体业界研究开发出新型的闪速存储器技术FlashMemory，作为一种结构简单性能可靠的不挥发性（Non-Volatile）存储，它区别于常规的DDR、SDRAM和RDRAM等挥发性内存能够在断电情况下长久可靠地保存数据信息。Flash依靠其大容量低成本、优秀的可靠性和耐用性、高达10万次的可擦写寿命以及易于使用和对各种恶劣环境的适应能力等突出的特点，迅速地得到市场的青睐。被各类便携型数字设备所采用，成为诸多手机、笔记本电脑等数码设备的存储介质基础。自然而然Flash产品和Flash技术成为了半导体集成电路业界的宠儿，各个集成电路代工工厂和制造厂家都大量的生产制造Flash产品以满足广大市场的需求。然而在整个Flash制造工艺的光刻环节中始终存在一个挥之不去的难题——Slash Issue，Slash issue会对Flash产品造成相当大面积的良率损失，甚至于对工艺中的某些层直接造成报废。因此对Flash产品中的Slash Issue的分析和研究对于良率的提高和成本的降低有着重大的意义。由于Slash Issue集中出现在光刻工艺环节，所以本文从Flash的发展史，工作原理和结构优缺点等基本知识做铺垫，详细介绍了与Flash制造密切相关的光刻工艺环节所涉及到的硬件和软件方面内容，包括整个光刻工艺的工作流程，光刻中需要用到的化学物质，硬件设备的结构和工作原理以及软体方面的显影工艺制程。然后分别从这些方面分析了各自与Slash defect形成的关系。本文选择以一个实际生产制造中出现的Slash defect造成整个代工厂Flash产品当线停产的case作为实例，，通过一系列对比测试和试验，在排除内部和外部环境、化学品、硬件设备方面的可能性之后，将Slash defect形成的根本原因锁定在显影制程上。然后通过增加涂布TARC光阻层以及建立更为优化的新显影程式，最终将Flash产品中的Slash issue完美的解决掉。确保了Flash产品不会因为DRB test fail而导致报废，避免了大量产品良率丢失和产品报废率，为今后的生产制造避免了巨大的经济损失。
[Abstract]:Since the semiconductor industry developed a new flash memory technology, Flash memory, in the 1980s, as a non-volatile non-volatile storage with simple structure and reliable performance, It is different from the conventional volatile memory, such as DDRN SDRAM and RDRAM, which can save data information reliably and for a long time under the condition of power failure. It depends on its large capacity, low cost, excellent reliability and durability. With the outstanding features of up to 100000 rewritable life, easy to use and adaptability to various harsh environments, it has been quickly favored by the market. It has been adopted by various portable digital devices and has become a lot of mobile phones. The storage media foundation of digital devices such as notebook computers. Naturally, Flash products and Flash technology have become the darling of the semiconductor integrated circuit industry. All integrated circuit manufacturing factories and manufacturers produce and manufacture Flash products in large quantities to meet the needs of the broad market. However, there is always a lingering problem in the lithography of the whole Flash manufacturing process-Slash issues will be met. Causing considerable yield losses to Flash products, Therefore, the analysis and research of Slash Issue in Flash products is of great significance for the improvement of yield and the reduction of cost. Because Slash Issue mainly appears in lithography process, this paper paves the way from the history of Flash, working principle, advantages and disadvantages of structure and so on. The hardware and software aspects involved in the lithography process which are closely related to Flash manufacturing are introduced in detail, including the work flow of the whole lithography process and the chemical substances used in lithography. The structure and working principle of the hardware and the development process of the software are analyzed, and the relationship between them and the Slash defect is analyzed respectively from these aspects. In this paper, an example of Slash defect, which caused the whole manufacturing plant to stop the production of Flash products, is selected as an example. Through a series of comparative tests and tests, the chemicals are excluded from the internal and external environment. After the hardware device is possible, the root cause of Slash defect formation is locked in the development process. Then by adding the TARC photoresistive layer and creating a more optimized new development program, Finally, the Slash issue in the Flash product is solved perfectly, which ensures that the Flash product will not be scrapped because of DRB test fail, and avoids the loss of yield and scrap rate of a large number of products, thus avoiding the huge economic loss for the future production and manufacture.
【学位授予单位】：天津大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TP333

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