PZT铁电薄膜疲劳状态下的电学性能

发布时间：2018-04-16 13:16

本文选题：铁电薄膜 + 疲劳　；参考：《中国科技论文》2015年22期

【摘要】：为了探究阻碍PZT铁电薄膜在市场上得到广泛应用的疲劳失效机理,本文对PZT(锆钛酸铅)铁电薄膜在疲劳过程中的电滞回线、漏电流、保持损失和印记特性的变化进行了研究。研究结果表明:在欧姆导电区域,PZT薄膜体电阻率随疲劳进程而减小,表明薄膜中氧空位体积分子数增大;在疲劳进程中,电滞回线向负电压方向偏移产生印记,同时保持损失随疲劳进程加剧,且正极化方向的保持能力相对更好;利用双势阱和氧八面体结构模型来解释实验现象,得到在疲劳进程中原胞内部的双势阱变浅、变窄导致极化下降,并且氧空位更易在氧八面体顶端形成而导致疲劳中产生印记和极化保持在正方向上更好的结果。
[Abstract]:In order to explore the fatigue failure mechanism of PZT ferroelectric thin films which are widely used in the market, the changes of hysteresis loop, leakage current, retention loss and imprint characteristics of PZT ferroelectric thin films during fatigue are studied in this paper.The results show that the bulk resistivity of PZT thin films decreases with the fatigue process in the ohmic conductive region, indicating that the number of oxygen vacancy volume molecules in the films increases, and the hysteresis loop shifts to the negative voltage direction to produce the imprint during the fatigue process.At the same time, the retention loss increases with the fatigue process, and the retention ability of the positive polarization direction is relatively better, the double potential well and the oxygen octahedron structure model are used to explain the experimental phenomenon, and the double potential well inside the original cell becomes shallower during the fatigue process.Narrowing leads to a decrease in polarization and oxygen vacancies are more likely to form at the top of an oxygen octahedron which leads to the formation of imprints in fatigue and a better result in the positive direction of polarization.
【作者单位】：北京工业大学电子信息与控制工程学院;
【基金】：高等学校博士学科点专项科研基金资助项目(20121103120019) 国家自然科学基金资助项目(61201046) 北京市自然科学基金资助项目(2132023)
【分类号】：TP333

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