一种新颖的二维纠错码加固存储器设计方法

发布时间：2018-05-10 11:46

本文选题：存储器 + 抗辐射加固　；参考：《宇航学报》2014年02期

【摘要】：提出了一种新颖的二维纠错码电路,可以有效地抑制辐射引起的存储器多位翻转。提出设计方法的最大特点是可以修正任意指定宽度的多位翻转,并以较低的硬件开销确保存储器的高可靠性。首先,本文提出一种新颖的二维修正码:把一个存储器的字拆分成一个二维矩阵的形式,分别对每一行和每一列加入多位错误探测码和奇偶校验码。随后,设计了存储器多位翻转的修正算法。最后,对提出的方法进行了电路和版图设计,并且利用提出的版图分割法解决了二维修正码冗余位中可能出现的多位翻转,进一步提高了存储器的可靠性。实验结果表明,提出的存储加固设计方法具有更高的可靠性。同目前已知的多位修正码相比,具有更低的编码和译码硬件开销,甚至低于只有一位修正能力的汉明码。
[Abstract]:A novel 2-D error-correcting code circuit is proposed, which can effectively suppress the memory multi-bit flip caused by radiation. The main characteristic of the proposed design method is that it can modify the multi-bit flipping with arbitrary width and ensure the high reliability of the memory with lower hardware overhead. First of all, a novel two-dimensional correction code is proposed: the word of a memory is divided into a two-dimensional matrix, and multi-bit error detection code and parity check code are added to each row and each column, respectively. Then, the modified algorithm of memory multi-bit flipping is designed. Finally, the circuit and layout of the proposed method are designed, and the proposed layout segmentation method is used to solve the possible multi-bit flipping in the redundant bits of two-dimensional correction code, which further improves the reliability of the memory. The experimental results show that the proposed design method is more reliable. Compared with the known multibit correction code, it has lower hardware cost of coding and decoding, and even lower than the hamming code with only one bit correction ability.
【作者单位】：哈尔滨工业大学微电子中心;中国空间技术研究院电子元器件可靠性中心;
【基金】：哈尔滨市科技创新人才研究专项资金项目(抗多位翻转存储器加固技术研究,2012RFXXG042)
【分类号】：TP333

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