电阻型存储器件的设计，制作及表征

发布时间：2018-05-19 16:37

本文选题：电阻型存储器 + NiO　；参考：《电子科技大学》2012年硕士论文

【摘要】：存储器是电子产品中不可或缺的组成部分,而传统的浮栅结构非挥发性存储器将在不远的将来迎来技术和物理上的极限。近年来,提出了一些新的材料和结构来解决这一问题,电阻型存储器就是其中之一。电阻型存储器(RRAM)在金属-绝缘介质-金属(MIM)的三层结构基础上,利用介质层的电阻开关现象实现数据的非挥发性存储,具有结构简单、工作电压低、低功耗、传感电路简单以及适于高密度阵列等优势。在本文中,制备并测试了基于NiO薄膜的电阻型存储器件,其高低阻态拥有大于三个数量级的电阻值区别。从低阻态到高阻态和从高阻态到低阻态所需的电压分别分布在1.2V到3.3V和0.5V到0.9V。对器件进行超过100次的反复擦写操作以及超过10000s的数据保持能力测试后仍有大于三个数量级的电阻窗口,显示出良好的耐擦写能力和数据保持能力。测试了基于NiO薄膜的电阻型存储器件的电阻开关特性,发现从低阻态到高阻态的过程中器件对电压有明显的选择性。另外无论是能否发生reset过程,均发现了一定的电阻波动。因此提出了电阻开关现象中的竞争机制。在柔性衬底上制备了NiO薄膜的WORM器件,通过NiO层中导电路径的建立实现电阻变换。可以用3V1μs的电脉冲实现了大于104的电阻窗口,这种器件同样也具备了良好的可靠性。另外,还研究了这种结构所具有的自我学习能力,根据外加电脉冲个数的不同,体现出了类似人脑的短时记忆和长期记忆。
[Abstract]:Memory is an indispensable part of electronic products, and the traditional floating gate nonvolatile memory will meet the technical and physical limits in the near future. In recent years, some new materials and structures have been proposed to solve this problem, and resistive memory is one of them. The resistive memory (RRAM) is based on the three-layer structure of metal-insulating dielectric-metal (Mimm), and realizes the non-volatile storage of data by using the resistive switch phenomenon in the dielectric layer. It has the advantages of simple structure, low working voltage and low power consumption. The sensor circuit is simple and suitable for high density array. In this paper, the resistive memory devices based on NiO thin films are fabricated and tested. The resistive values of the high and low resistance states are more than three orders of magnitude. The voltages from low resistance to high resistance and from high to low resistance are 1.2V to 3.3V and 0.5V to 0.9V, respectively. After more than 100 repeated erasing operations and more than 1000 s data retention test, there are still resistor windows of more than three orders of magnitude, which shows good ability of erasing and data retention. The resistive switching characteristics of resistive memory devices based on NiO thin film are tested. It is found that the device has obvious selectivity to voltage during the process from low resistance state to high resistance state. In addition, whether or not the reset process occurs, a certain resistance fluctuation is found. Therefore, the competitive mechanism of resistance switch is proposed. The NiO thin film WORM devices were fabricated on flexible substrates, and the resistance transformation was realized by establishing the conductive path in the NiO layer. The resistor window larger than 104 can be realized by using 3V1 渭 s electric pulse, and this device also has good reliability. In addition, the self-learning ability of this structure is studied. According to the different number of external electric pulses, the short-term memory and long-term memory similar to the human brain are reflected.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TP333

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