浅析X-ray辐射对SSD闪存数据存储的影响

发布时间：2018-05-20 19:28

本文选题：“与”型闪存 + “或”型闪存　；参考：《复旦大学》2013年硕士论文

【摘要】：早在上世纪60年代,人们就发现由于太空辐射导致了微电子器件功能失效,这对卫星产生了致命的危害。后期的各个时间段里,人们对辐射对微电子器件的影响的机理做了详细的研究,并提出了加固的方案。不过前期的研究,主要还是正对MOS管器件。随着EPROM、EEPROM、DDR、Flash的陆续发明和使用,辐射对这些产品的影响也逐步的被意识和研究。本文是基于在实际生产过程中,发现存在闪存中的数据,经过了一定时间x射线的检查后,原来的阈值电压有变化,进而针对现在常用的24nm SSD存储芯片做了进一步的研究。本文首先对闪存产品的基本结构和读、写、擦的功能做了基本介绍；然后是详细介绍了所使用的芯片结构和测试使用的软硬件,给出了实验计划和实验结果的分析方法；根据实验的结果做了详细的分析,确认了在不同辐射剂量下对不同存储数据类型的影响,温度,不同叠层,不同芯片受到一定辐射后的差异性,以及受到辐射后从新擦除和写入数据的正确性和可靠性做了比较详细的研究。基于EPROM和MOS管辐射的影响机理,总结了辐射对于FLASH闪存的影响并做了一定的分析,最后提出了一些在实际生产过程中使用X射线的注意事项。
[Abstract]:As early as the 60s of last century, it was found that space radiation caused the failure of the function of microelectronic devices, which had fatal harm to the satellite. In the later period, the mechanism of the effect of radiation on microelectronic devices was studied in detail, and the scheme of consolidation was put forward. MOS tube devices. With the invention and use of EPROM, EEPROM, DDR and Flash, the influence of radiation on these products is gradually realized and studied. This article is based on the discovery of the existence of data in the flash memory in the actual production process. After a certain time, the threshold voltage has changed after a certain time of X ray inspection, and then it is commonly used in common use. The 24nm SSD memory chip has been further studied. This article first introduces the basic structure of the flash memory product and the function of reading, writing, and wiping; then it introduces the structure of the chip and the software and hardware used in the test, and gives the analysis method of the experimental plan and the experimental results. The effect of different types of storage data under different radiation doses, temperature, different layers, different chips after certain radiation, and the correctness and reliability of the new erasure and write data after radiation are studied in detail. The mechanism based on the radiation of EPROM and MOS tubes is summarized. The influence of radiation on FLASH flash memory is analyzed. Finally, some notices of using X ray in actual production process are put forward.
【学位授予单位】：复旦大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TP333

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