纳米结构阻变存储器的制作与性能研究

发布时间：2018-05-21 17:00

本文选题：阻变存储器 + 硫氰酸亚铜　；参考：《南昌大学》2015年硕士论文

【摘要】：阻变存储器(RRAM)是一种新型的非挥发性随机存储器,它在传统的存储器基础上进行改进,不仅提高了器件的存储密度,大大的降低了其制造成本,并能与集成电路工艺更好的兼容。本文利用材料在纳米尺度下具有特殊性能的特点,对p型硫氰酸亚铜、n型氧化锌、聚甲基丙烯酸甲酯、金属铁纳米颗粒镶嵌非晶纳米氧化铝这4种材料的阻变性能展开了深入的研究,主要结论如下:1.利用电化学沉积的方法在ITO导电玻璃片上制备了空心三角锥状的硫氰酸亚铜薄膜,实验结果表明,得到空心形貌的最佳的沉积条件为:频率1KHz,低电压为300 mV、高电压为900 mV的脉冲电压,电解液组成为0.01 mol/L的CuSO4+0.05 mol/L的KSCN+0.1 mol/L的ETA,沉积时间10分钟。将其构筑成电阻开关器件后,通过施加交流电压、单方向的电压和直流脉冲电压等不同类型的外加电场发现,硫氰酸亚铜器件具有信息存储的功能,并提出了空间电荷极化效应机制来解释该现象。2.设计了CuSCN/PMMA/ZnO(p-i-n)三明治型阻变存储器。当外加电场作用在由p-CuSCN和n-ZnO构成的p-n结上时,器件仅仅表现出整流效应,而加入PMMA后,器件表现为稳定的双极性电阻开关效应。最终分析得出,由于PMMA的加入,器件的耗尽区增加,且在外加电场作用下,ZnO和CuSCN中的陷阱会发生填充和排空,ZnO和CuSCN之间就发生量子隧穿效应。3.采用以表面活性剂的自组装体系为模板的均相沉淀法制备了金属铁纳米颗粒镶嵌非晶纳米氧化铝材料,构筑了Fe/Al2O3的阻变存储器,并在不同温度下对器件进行测试。结果表明,温度的改变能影响材料内部陷阱电子的运动,温度越高,器件的导电性越差。343 K时,器件不再导通;297 K时,器件表现为欧姆接触,能对信息进行存储,研究发现是由于材料内部陷阱电子发生直接遂穿所致;273 K环境下冷却处理后,曲线双向交叉,表现为稳定的电阻开关效应,从结果中研究得出陷阱电子在低电压下发生直接遂穿,高电压下发生空间电荷极化效应。
[Abstract]:Resistive memory (RRAM) is a new type of nonvolatile random access memory, which is improved on the basis of traditional memory. It not only increases the storage density of devices, but also greatly reduces its manufacturing cost. And can be more compatible with integrated circuit technology. In this paper, based on the special properties of the materials at nanoscale, the p-type cuprous thiocyanate n-type zinc oxide and polymethyl methacrylate were studied. The resistance properties of the four kinds of amorphous aluminum oxide embedded in metallic iron nanoparticles have been studied. The main conclusions are as follows: 1. Hollow triangular conical cuprous thiocyanate thin films were prepared on ITO conductive glass by electrochemical deposition. The optimum deposition conditions for hollow morphology are as follows: frequency 1 kHz, low voltage 300mV, high voltage 900mV pulse voltage, electrolyte composition 0. 01 mol/L CuSO4 0. 5 mol/L KSCN 0. 1 mol/L, deposition time 10 minutes. By applying different types of applied electric field, such as AC voltage, unidirectional voltage and DC pulse voltage, it is found that cuprous thiocyanate device has the function of information storage. The mechanism of space charge polarization effect is proposed to explain this phenomenon. CuSCN / PMMA / ZnOp-i-n) sandwich type resistive memory is designed. When the applied electric field acts on the p-n junction composed of p-CuSCN and n-ZnO, the device only exhibits rectifying effect, while the device with PMMA exhibits a stable bipolar resistance switch effect. Finally, it is found that the depletion region increases with the addition of PMMA, and the quantum tunneling effect between CuSCN and CuSCN is observed by filling and emptying the traps in CuSCN under the applied electric field. Amorphous nanocrystalline Al _ 2O _ 3 materials were prepared by homogeneous precipitation method using the self-assembly system of surfactant as template. The Fe/Al2O3 resistive memory was constructed and the devices were tested at different temperatures. The results show that the change of temperature can affect the movement of trap electrons in the material. The higher the temperature, the worse the conductivity of the device is .343K. When the device is no longer conducting at 297K, the device exhibits ohmic contact and can store the information. It is found that the curve intersects in both directions after cooling at 273K due to the direct penetration of trap electrons in the material, which shows a stable resistance switch effect. From the results, it is found that the trap electron directly penetrates at low voltage, and the space charge polarization effect occurs at high voltage.
【学位授予单位】：南昌大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TP333

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