基于三维SiP的高性能微处理器热能关键技术研究

发布时间：2018-05-30 22:40

  本文选题：三维集成电路 + 三维系统级封装　； 参考：《国防科学技术大学》2013年硕士论文

【摘要】：经过40多年的发展,集成电路工艺发展到深亚微米和超深亚微米阶段,给高性能微处理器的发展带来了很多困难和挑战。二维集成技术的功耗问题、访存问题、片上互连问题,制约着高性能微处理器性能的进一步提高。三维SiP是一种新的集成电路封装技术。通过在垂直方向堆叠多层芯片,三维SiP可提高芯片的集成度,并有效地减少互连线长度,为设计高性能、高集成度的集成电路、多核/众核微处理器提供了有利条件,是未来集成电路重要的发展趋势。三维集成电路中,多层芯片的垂直堆叠在使芯片的功率密度急剧增加的同时,还减少了芯片的散热表面积。由于中间芯片无法连接散热器,高性能微处理器原本严重的温度问题在三维SiP中加剧,其性能和可靠性受到严重影响。因此在基于三维SiP的高性能微处理器中,温度管理至关重要。基于三维SiP的高性能微处理器的设计和温度管理很大程度取决于在芯片早期设计阶段的热分析的效果和温度的分布、变化规律模拟的准确性。因此研究和建立精确、高效的热模型是十分必要的。传统的空冷散热器已无法满足基于三维SiP的高性能微处理器的温度过高引入的散热需求。微通道液体冷却技术通过在芯片间建立微通道,采用更高效液体冷却散热,可快速排出芯片中的热量,降低芯片温度,是三维SiP的一种有效的散热技术。3D-ICE是一种流行的微通道液体冷却的三维集成电路的瞬态温度模拟器,本文在利用3D-ICE对基于SiP的性能微处理器的模拟过程中发现,不同层间的温度差异较大。而TSV作为三维SiP中重要的组成结构,由于采用高热导率的金属,能促进三维集成电路层与层间的热传导。因此在进行温度模拟的过程中考虑TSV对热传导的影响是很有必要的。基于此,本文首先分析TSV的结构,根据其结构特点,对方形和圆形TSV在不同位置、结构的情况下进行热建模。然后修改3D-ICE模拟器,使其能对TSV结构进行模拟,并对模拟器的正确性进行分析验证,并分析TSV在不同布局、数量、大小时对三维集成电路的影响。最后利用修改后的模拟器分析了三维SiP的散热特点,并据此从静态、动态两个方面提出适用于微通道液体冷却的三维集成电路的温度调节方案。
[Abstract]:After more than 40 years' development, integrated circuit technology has developed to deep sub-micron and ultra-deep sub-micron stage, which has brought many difficulties and challenges to the development of high-performance microprocessors. The problems of power consumption, memory access and on-chip interconnection in two-dimensional integration technology restrict the further improvement of the performance of high-performance microprocessors. 3D SiP is a new integrated circuit packaging technology. By stacking multilayer chips in the vertical direction, 3D SiP can improve the integration of chips and reduce the length of interconnect effectively. It provides a favorable condition for the design of high performance and high integration integrated circuits and multi-core / multi-core microprocessors. It is an important development trend of IC in the future. In 3D integrated circuits, the vertical stacking of multilayer chips not only increases the power density of the chips, but also reduces the surface area of the chips. Because the intermediate chip can not connect to the radiator, the temperature problem of the high performance microprocessor is aggravated in 3D SiP, and its performance and reliability are seriously affected. Therefore, temperature management is very important in high performance microprocessors based on 3 D SiP. The design and temperature management of high-performance microprocessors based on 3D SiP depend to a great extent on the effect of thermal analysis and temperature distribution in the early stage of chip design, and the accuracy of simulation of variation law. Therefore, it is necessary to study and establish an accurate and efficient thermal model. The traditional air cooling radiator can not meet the requirement of high temperature introduced by high performance microprocessor based on 3D SiP. Microchannel liquid cooling technology, by establishing microchannels between chips and adopting more efficient liquid cooling and cooling heat dissipation, can quickly discharge the heat in the chip and reduce the chip temperature. It is an effective heat dissipation technology of 3D SiP. 3D-ICE is a popular transient temperature simulator for 3D integrated circuit cooled by microchannel liquid. In this paper, it is found in the process of simulating the performance microprocessor based on SiP by using 3D-ICE. There is a great difference in temperature between different layers. As an important structure in 3D SiP, TSV can promote the thermal conduction between the layers of 3D integrated circuits because of the high thermal conductivity of metals. Therefore, it is necessary to consider the effect of TSV on heat conduction in the process of temperature simulation. Based on this, this paper firstly analyzes the structure of TSV, according to its structural characteristics, the thermal modeling of square and circular TSV in different positions and structures is carried out. Then the 3D-ICE simulator is modified to simulate the TSV structure, and the correctness of the simulator is analyzed and verified, and the influence of TSV on the 3D integrated circuit with different layout, quantity and size is analyzed. Finally, the heat dissipation characteristics of 3D SiP are analyzed by using the modified simulator, and the temperature adjustment scheme of 3D integrated circuit suitable for microchannel liquid cooling is put forward from static and dynamic aspects.
【学位授予单位】：国防科学技术大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TP332
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本文编号：1957144