非晶碳阻变存储器的研究

发布时间：2018-06-03 07:28

  本文选题：非晶碳薄膜 + 磁控溅射　； 参考：《中南大学》2014年硕士论文

【摘要】：摘要：随着存储器朝着高存储密度、长保持时间、微型化、低功耗和读写速度快等方向发展,与互补金属氧化物半导体(CMOS)工艺兼容的新型非易失性存储器——基于电致电阻效应的电阻型存储器(RRAM)兼具结构简单的特点,正受到人们的广泛关注。目前RRAM发展的关键是研发新的存储材料和阐明RRAM阻变机理。非晶碳薄膜组分简单且稳定性高,是RRAM的理想候选材料之一。 本文对比研究了Ar和N2作为起辉气体制备的沉积态非晶碳薄膜和氮掺杂非晶碳薄膜的电学性能。发现Ar起辉制备的非晶碳膜均无电致电阻效应。N2起辉制备的氮掺杂非晶碳薄膜均表现出电致电阻效应,性能最好的器件能稳定循环102以上,开关比略大于10,但器件产率只有50%左右。 通过对磁控溅射制备的氮掺杂碳膜在惰性气氛中进行热处理,制备出非晶碳薄膜,其内部含有大量几十纳米孔径的通孔。基于这些纳米多孔结构,首次制备出了包含金属纳米导电的无Forming过程(Forming-free)电阻转变特性的两端器件,该器件具有优异的抗疲劳性和数据保持性能,能稳定循环103次以上,室温数据保持性接近84天,120℃、Ar环境下能稳定保持7天。同时探究了Cu、Ag、Pt三种金属顶电极对电阻转变性能的影响,得出Cu顶电极的器件性能最好,Pt顶电极的所有器件均无电致电阻效应。 运用X光电子能谱仪(XPS)、原子力显微镜(AFM)、导电原子力显微镜(CAFM)、透射电镜(TEM)和综合物理测试系统(PPMS)等手段对非晶碳薄膜和器件进行了表征,证实了退火态氮掺杂碳膜中“锥形”金属导电细丝的存在。碳膜RRAM器件的电阻转变机理遵循金属导电细丝模型,Cu导电细丝中发生电化学溶解导致的细丝通断引发器件的SET和RESET过程。
[Abstract]:Absrtact: with the development of memory towards high storage density, long retention time, miniaturization, low power consumption and fast reading and writing speed, A new type of non-volatile memory compatible with complementary metal oxide semiconductor (CMOS) process, a resistive memory based on electroresistance effect (RRAM), has attracted much attention due to its simple structure. At present, the key to the development of RRAM is to develop new storage materials and clarify the mechanism of RRAM resistance. Amorphous carbon thin film is one of the ideal candidate materials for RRAM because of its simple composition and high stability. The electrical properties of deposited amorphous carbon films and nitrogen doped amorphous carbon films prepared by ar and N2 as starting gases have been studied in this paper. It is found that the amorphous carbon films prepared by ar have no electroresistance effect. The nitrogen-doped amorphous carbon films prepared by N2 priming have electroresistance effect, and the devices with the best performance can cycle more than 102. The switching ratio is slightly greater than 10, but the device yield is only about 50%. Amorphous carbon films were prepared by heat treatment of nitrogen-doped carbon films prepared by magnetron sputtering in inert atmosphere. Based on these nano-porous structures, the two end devices containing metal nanoscale conduction without Forming process Forming-freeform resistance transition characteristics have been fabricated for the first time. The device has excellent fatigue resistance and data retention performance, and can stabilize the cycles more than 103times. The data retention at room temperature is close to 84 days and can be kept stable for 7 days at 120 鈩，

本文编号：1971982