基于二元氧化物阻变存储器的研究

发布时间：2018-06-08 04:51

  本文选题：非挥发存储器 + 阻性存储器　； 参考：《西安电子科技大学》2014年硕士论文

【摘要】：存储器与人们的生活密切相关，，非挥发性存储器则占据了存储器市场的百分之九十以上。Flash代表着当今应用最为广泛的非挥发性存储器，占半导体存储器市场的绝大份额。然而，基于传统浮栅结构的Flash技术遭遇到了严重的技术瓶颈，严重的影响了Flash的进一步广泛应用。一些基于其它原理实现存储功能的新型非挥发性存储器近年来得到了人们越来越多的关注。而RRAM作为这种新型非挥发性存储器中的一员，凭借其高读写速度、低功耗、高集成度、低成本等优势成为下一代主流存储器的重点研究对象。 本文将研究RRAM的注意力集中在二元金属氧化物材料上，因为其组份简单且制备工艺与目前的CMOS制程相兼容。主要开展了基于TiO2、TiO2/Al2O3、La2O3材料RRAM器件电阻转变特性以及电阻转变机制方面的研究。论文首先对RRAM阻变存储器的基本原理，结构和研究现状进行了简单的论述。目前世界范围内对RRAM研究仍然停留于初始阶段，本课题实验过程中首先制备了三种不同结构和功能层的RRAM器件单元，然后用半导体参数测试仪对所制备的RRAM器件进行了伏安特性测试。通过对测试结果的分析，我们对RRAM器件的阻变机制进行了合理解释，并为将来RRAM存储器设计提出了一些想法和建议。
[Abstract]:Memory is closely related to people's life. Non-volatile memory (NVM) occupies more than 90% in the memory market. Flash represents the most widely used non-volatile memory and occupies the majority share of semiconductor memory market. However, Flash technology based on traditional floating gate structure has encountered a serious technical bottleneck, which has seriously affected the further wide application of Flash. Some new nonvolatile memory based on other principles have been paid more and more attention in recent years. RRAM as a member of this new non-volatile memory, with its high read and write speed, low power consumption, high integration, Low cost and other advantages have become the main research object of the next generation mainstream memory. This paper focuses on binary metal oxide materials because of its simple composition and compatible fabrication process with the current CMOS process. The resistance transition characteristics and resistance transition mechanism of RRAM devices based on TIO _ 2 / Al _ 2O _ 3 / Al _ 2O _ 3 and La _ 2O _ 3 are studied. Firstly, the basic principle, structure and research status of RRAM resistive memory are briefly discussed in this paper. At present, the research of RRAM in the world is still in the initial stage. In the course of the experiment, three kinds of RRAM devices with different structures and functional layers have been fabricated. Then the voltammetric characteristics of the fabricated RRAM devices were measured by semiconductor parameter tester. Through the analysis of the test results, we explain the resistive mechanism of RRAM devices reasonably, and put forward some ideas and suggestions for the design of RRAM memory in the future.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TP333

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