基于蒙特卡洛和器件仿真的单粒子翻转计算方法

发布时间：2018-06-16 07:07

本文选题：蒙特卡罗 + 单粒子翻转　；参考：《物理学报》2014年19期

【摘要】：文章提出了一种基于蒙特卡洛和器件仿真的存储器单粒子翻转截面获取方法,可以准确计算存储器单粒子效应,并定位单粒子翻转的灵敏区域.基于该方法,计算了国产静态存储器和现场可编程门阵列(FPGA)存储区的单粒子效应的截面数据,仿真结果和重离子单粒子效应试验结果符合较好.仿真计算揭示了器件单粒子翻转敏感程度与器件n,p截止管区域面积相关的物理机理,并获得了不同线性能量转移(LET)值下单粒子翻转灵敏区域分布.采用蒙特卡洛方法计算了具有相同LET、不同能量的离子径迹分布,结果显示高能离子的电离径迹半径远大于低能离子,而低能离子径迹中心的能量密度却要高约两到三个数量级.随着器件特征尺寸的减小,这种差别的影响将会越来越明显,阈值LET和饱和截面将不能完全描述器件单粒子效应结果.
[Abstract]:In this paper, a method based on Monte Carlo and device simulation is proposed to obtain the single particle flip cross section of the memory, which can accurately calculate the single particle effect of the memory and locate the sensitive region of the single particle flip. Based on this method, the cross section data of single particle effect in domestic static memory and field programmable gate array (FPGA) storage area are calculated. The simulation results are in good agreement with the results of heavy ion single particle effect test. The simulation results reveal the physical mechanism of the single particle flipping sensitivity related to the area of the device NLP cutoff tube, and obtain the distribution of the single particle flip sensitive region under different linear energy transfer (LET) values. Monte Carlo method is used to calculate the ion track distribution with the same LET and different energies. The results show that the ionization track radius of high energy ion is much larger than that of low energy ion, but the energy density of track center of low energy ion is about two to three orders of magnitude higher than that of low energy ion track center. As the characteristic size of the device decreases, the effect of this difference will become more and more obvious, and the threshold let and the saturation cross section will not be able to fully describe the single-particle effect of the device.
【作者单位】：工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室;西北核技术研究所;中国原子能科学研究院;
【分类号】：O572.2;TP333

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