RRAM存储单元设计

发布时间：2018-06-18 17:11

本文选题：非易失性 + RRAM　；参考：《西安电子科技大学》2013年硕士论文

【摘要】：近年来，在便携电子产品推动下，对于非挥发性存储器（NVM）的需求日益增长。FLASH代表着当今应用最为广泛的非挥发性存储器，其发展始终与摩尔定律保持一致。然而，由于面临22nm的尺寸极限，FLASH的未来发展将受到严重制约。作为闪存的潜在替代者，新型非挥发性存储器（NVM）受到了广泛的研究。而阻性随机存取存储器（RRAM）则凭借其独特优势备受关注。本文首先介绍了RRAM阻变存储器基本原理和研究现状，并根据RRAM研究仍然停留于实验测试研究阶段的现状，，提出了实验研究与计算机仿真相结合的方法，以便于更好地对RRAM物理机制进行探索。其次，开展了对RRAM存储单元材料结构设计的研究，制备了一系列RRAM单元样品，并进行了电学特性测试和分析。再次，学习和研究了ATLAS仿真工具的使用，并利用ATLAS仿真工具完成对RRAM单元的建模和仿真，并完成仿真结果分析。最后，根据实验测试数据和仿真结果，对RRAM存储器设计所存在的问题提出了一系列建议。
[Abstract]:In recent years, driven by portable electronic products, the demand for non-volatile memory (NVMN) has been increasing. Flash represents the most widely used non-volatile memory, and its development is consistent with Moore's law. However, the future development of flash will be severely restricted due to the size limit of 22nm. As a potential alternative to flash memory, new non-volatile memory (NVM) has been widely studied. RRAM (resistive random access memory) has attracted much attention because of its unique advantages. This paper first introduces the basic principle and research status of RRAM resistive memory, and according to the current situation that RRAM research is still in the stage of experimental test and research, the method of combining experimental research with computer simulation is put forward. In order to better explore the physical mechanism of RRAM. Secondly, a series of RRAM cell samples were prepared, and the electrical properties were tested and analyzed. Thirdly, the use of ATLAS simulation tools is studied, and the modeling and simulation of RRAM cells are completed by using ATLAS simulation tools, and the simulation results are analyzed. Finally, according to the experimental data and simulation results, a series of suggestions on the design of RRAM memory are put forward.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TP333

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