65nm三阱CMOS静态随机存储器多位翻转实验研究

发布时间：2018-06-18 20:51

本文选题：多位翻转 + 静态随机存储器　；参考：《原子能科学技术》2017年05期

【摘要】：利用4种不同线性能量转换值的重离子对一款65nm三阱CMOS静态随机存储器(SRAM)进行重离子垂直辐照实验,将多位翻转图形、位置和事件数与器件结构布局结合对器件单粒子翻转截面、单粒子事件截面及多位翻转机理进行深入分析。结果表明,单粒子事件截面大于单个存储单元内敏感结点面积,单粒子翻转截面远大于单个存储单元面积。多位翻转事件数和规模的显著增长导致单粒子翻转截面远大于单粒子事件截面,多位翻转成为SRAM单粒子翻转的主要来源。结合器件垂直阱隔离布局及横向寄生双极晶体管位置,分析得到多位翻转主要由PMOS和NMOS晶体管的双极效应引起,且NMOS晶体管的双极效应是器件发生多位翻转的主要原因。
[Abstract]:Four kinds of heavy ions with different linear energy conversion values are used to carry out heavy ion vertical irradiation experiments on a 65nm three-well CMOS static random access memory (SRAM). The position and the number of events are combined with the structure of the device to analyze the single event cross section, single particle event cross section and the mechanism of multiposition inversion. The results show that the single event cross section is larger than the area of the sensitive node in a single memory cell, and the single particle flip section is much larger than the area of a single memory cell. The significant increase in the number and scale of multi-bit flipping events leads to the fact that the single-particle flip cross section is much larger than the single-particle event cross section, and the multi-bit flip becomes the main source of SRAM single-particle flip. Combined with the vertical well isolation arrangement and the position of lateral parasitic bipolar transistor, it is found that the multibit flip is mainly caused by the bipolar effect of PMOS and NMOS transistors, and the bipolar effect of NMOS transistor is the main cause of multibit turnover.
【作者单位】：中国原子能科学研究院核物理研究所;国防科学技术大学;
【基金】：国家自然科学基金资助项目(11475272)
【分类号】：TP333

【相似文献】