阻变存储器特性研究及读写电路设计

发布时间：2018-06-27 16:19

本文选题：阻变存储单元 + 阻变特性　；参考：《华中科技大学》2013年硕士论文

【摘要】：阻变随机存储器具有低压、高速、低功耗、结构简单、与CMOS传统工艺兼容、低成本、高密度等优势而越来越受到广泛的关注，被认为是下一代可能取代闪存而成为主流存储产品的一种新型存储器。同时，由于纳米电子学的发展，给集成电路的发展带来了新的机遇，阻变存储器作为一种具有很好技术潜力的新型存储器，将有望在众多领域得到广泛的应用。目前，为进一步产量化阻变存储器而作为通用的随机存储器，需要熟悉阻变存储器件的特性及设计合适的驱动电路。课题的主要工作就集中在对阻变存储器的特性研究及其读写电路的设计。首先，从阻变存储元入手分析阻变存储器的存储原理、一般阻变存储器件的性能参数，对阻变存储器件进行分类，研究能用作阻变存储器的材料体系，结合存储元研究几种常用阻变存储单元结构，比较各种结构的优缺点，，分析阻变存储器件性能的影响因素。其次，研究阻变存储单元阻变行为的几种机制及几种阻变存储单元的建模方法。由于可用作阻变存储器件的材料较多，不同材料体系的阻变机制有所区别，根据不同材料的I-V特性曲线分析其相应的阻变机制。为了方便阻变存储器的集成设计，提出了阻变存储单元的建模方法和模型。最后，设计一种用于阻变存储器的读写电路。提出了读写电路的整体模块结构图，以层次及模块化方法设计了读写电路。针对阻变存储单元特殊的I-V特性曲线，分别从脉冲信号的宽度与幅值两个角度设计出读写电路的逻辑电路部分及模拟电路部分，并做了仿真验证。同时对设计出的读写电路作了优化，给出了一种用于优化电路的操作方法，以提高读写电路的准确性，并通过减少对阻变存储单元写操作次数来提高阻变存储器件的使用寿命。
[Abstract]:Resistive random access memory (RAM), with low voltage, high speed, low power consumption and simple structure, is becoming more and more widely concerned with the advantages of traditional CMOS technology, low cost and high density. It is considered to be a new type of storage device that may replace flash memory and become the mainstream storage product. Development brings new opportunities. As a new type of memory with good technical potential, resistive memory is expected to be widely used in many fields. At present, as a universal random memory for further production of resistive memory, it is necessary to be familiar with the characteristics of the resistive storage devices and to design appropriate driving circuits. The main work is focused on the study of the characteristics of the resistive variable memory and the design of its read-write circuit.
Firstly, the storage principle of resistive memory is analyzed from the impedance storage element, the performance parameters of the resistive memory device are generally classified, the resistive memory parts are classified, the material system which can be used as the resistive memory is studied, and the structure of several commonly used resistive memory cells is studied with the storage element, and the advantages and disadvantages of various structures are compared, and the resistive memory is analyzed. The factors affecting the performance of the parts.
Secondly, several mechanisms of resistive memory cell resistance and several modeling methods of resistive storage unit are studied. Because more materials are used as resistive storage devices, the resistance mechanism of different material systems is different, and the corresponding resistance mechanism is analyzed according to the I-V characteristic curve of different materials. A modeling method and model of resistive variable memory cell are proposed.
Finally, a reading and writing circuit for the resistive memory is designed. The overall modular structure of the read write circuit is proposed. The read write circuit is designed by the hierarchical and modularized method. In view of the special I-V characteristic curve of the resistive memory unit, the logic circuit part and the module of the reading and writing circuit are designed from two angles of the width and amplitude of the pulse signal. The circuit part of the circuit is simulated and the simulation verification is done. At the same time, the designed reading and writing circuit is optimized, and an operation method used to optimize the circuit is given to improve the accuracy of the read and write circuit, and to improve the service life of the resistive storage device by reducing the number of write operations on the resistive storage unit.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TP333

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