新型非易失存储研究

发布时间：2018-07-01 17:00

本文选题：非易失存储 + PCRAM　；参考：《计算机研究与发展》2014年02期

【摘要】：近年来,由于处理器性能和存储性能之间的差距不断扩大,存储系统成为计算机整体系统性能提升的瓶颈.随着微电子技术的迅速发展,新型非易失存储器件由于具有非易失、低能耗、良好的可扩展性和抗震等优良特性,得到了学术界和工业界的广泛关注.介绍了4种新型非易失存储器件,分别是STT-RAM,RRAM,PCRAM和FeRAM,对比了其与传统存储器件的性能参数.讨论了目前在存储架构中的不同层面(即缓存层、主存层和外存层)针对这些非易失存储器件的利用所开展的一些探索性工作,并分析了其中针对非易失存储器件的写次数有限、读写性能不均衡等不足所作出的一些策略设计.最后,对新型非易失存储器件的研究现状进行了总结,并提出了未来可能的发展方向.
[Abstract]:In recent years, due to the widening gap between processor performance and storage performance, memory system has become the bottleneck of the overall computer system performance improvement. With the rapid development of microelectronic technology, new non-volatile memory devices have attracted extensive attention from academia and industry because of their excellent characteristics such as non-volatile, low energy consumption, good scalability and seismic resistance. Four new non-volatile memory devices, STT-RAM RRAM PCRAM and FeRAM, are introduced, and their performance parameters are compared with those of traditional memory devices. In this paper, some exploratory work on the use of these non-volatile memory devices at different levels in memory architecture (i.e. buffer layer, main memory layer and external memory layer) is discussed. Some strategies are designed to solve the problems such as the limited write times of non-volatile memory devices and the uneven performance of reading and writing. Finally, the research status of new nonvolatile memory devices is summarized, and the possible development direction in the future is proposed.
【作者单位】：清华大学计算机科学与技术系;清华大学信息科学与技术国家实验室(筹);
【基金】：国家杰出青年科学基金项目(60925006) 国家“八六三”高技术研究发展计划基金项目(2013AA013201)
【分类号】：TP333

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