纳米点调控氧化物忆阻器电导特性研究进展

发布时间：2018-07-27 14:10

【摘要】：从调控氧化物忆阻器电导特性的主要方法与机理出发,综述了纳米点在氧化物忆阻器电导行为调制及其参数稳定性改善等方面的研究进展。针对纳米点调控氧空位的扩散迁移、电场迁移及其共同作用,分析了纳米点对氧化物忆阻器的电形成过程、开态过程和关态过程的作用机制,并讨论了其对参数均一性、耐久能力、疲劳特性、电阻比率及开关时间等参数的影响。结果表明,纳米点的引入可以显著改善忆阻器性能参数的稳定性和可控性,并进一步指出纳米点在优化其电导特性方面存在的不足和可能的解决措施,预测了性能优化的氧化物忆阻器在非易失存储、人工神经网络等领域的应用前景。
[Abstract]:Based on the main methods and mechanisms of regulating the conductance characteristics of oxide memristors, this paper reviews the research progress of nanowires in the modulation of conductance behavior and the improvement of parameter stability of oxide memristors. In order to control the diffusion and migration of oxygen vacancies, electric field migration and their interaction, the mechanism of nanowires on the electrical formation, open state and off state processes of oxide memristors is analyzed, and the uniformity of parameters is discussed. Durability, fatigue characteristics, resistance ratio and switching time and other parameters. The results show that the introduction of nanometers can improve the stability and controllability of the performance parameters of the resistive devices, and further point out the shortcomings and possible solutions to optimize the conductance characteristics of the nanowires. The application prospects of the optimized oxide resistor in non-volatile memory and artificial neural network are predicted.
【作者单位】：北京航空航天大学物理系;中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室;
【基金】：国家自然科学基金资助项目(51172009,51172013,51132008) 信息功能材料国家重点实验室开放课题资助项目
【分类号】：TP333

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