电荷俘获存储器界面缺陷生长模型及其可靠性模拟
发布时间：2018-08-01 18:18
【摘要】：建立界面缺陷态密度随时间变化的模型。对电荷俘获存储器在不同应力条件下的可靠性进行模拟,为正常工作情形下,电荷俘获存储器内界面缺陷的生长机制以及不同应力条件下器件性能的退化提供预测工具。
[Abstract]:A model of the variation of the density of states of interface defects with time is established. The reliability of charge capture memory under different stress conditions is simulated, which provides a prediction tool for the growth mechanism of interface defects in charge capture memory and the degradation of device performance under different stress conditions.
【作者单位】： 北京大学深圳研究生院;北京大学微电子学研究院;
【分类号】：TP333
本文编号：2158433
[Abstract]:A model of the variation of the density of states of interface defects with time is established. The reliability of charge capture memory under different stress conditions is simulated, which provides a prediction tool for the growth mechanism of interface defects in charge capture memory and the degradation of device performance under different stress conditions.
【作者单位】： 北京大学深圳研究生院;北京大学微电子学研究院;
【分类号】：TP333
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