某型MCU中掩膜ROM设计
发布时间：2018-08-02 14:12
【摘要】：随着科学与经济的不断发展，中国已经成为世界消费类电子产品的重要生产基地和消费大国，市场对具有各种功能芯片的需求与日俱增，其中MCU芯片以其较高的性价比被广泛应用在众多消费类电子产品中。市场的激烈竞争使得MCU芯片制造厂家们对于生产成本的控制十分严格。而ROM作为影响MCU芯片成本的关键因素，受到设计者们高度的重视。 整个只读存储器(ReadOnlyMemory，ROM)模块是在总体设计方案确定之后，按照技术指标对电路各个功能模块进行设计。在设计存储阵列的时候，我们提出了一种新的结构：Flat-Cell存储结构，由于在Flat-Cell工艺中单元阵列全部设计在一个大的有源区上，是一种平面结构，存储单元之间是靠PN结进行隔离，不存在场氧化层。所以不会因为场区热氧化杂质再分布而使沟道宽度减小，不会有鸟嘴现象发成，也不会产生窄沟道效应，因此会使单元面积大为减小，集成度提高，性能可靠，同时也降低了制造成本。Flat-Cell技术的提出与应用使得ROM的技术指标得到了很大的提高。基于Flat-Cell技术设计的掩膜只读存储器在功能和性能上体现了自己的优势，随着工艺技术的不断发展，，更小尺寸的Flat-Cell工艺必将成为制造掩膜存储器的主流工艺，由于它与CMOS工艺相兼容，一定会有越来越多的IC设计者把它做为掩膜ROM的首选工艺。
[Abstract]:With the development of science and economy, China has become an important production base and a big consumer of consumer electronic products in the world. Among them, MCU chip is widely used in many consumer electronics because of its high cost-performance ratio. The fierce competition in the market makes MCU chip manufacturers to control the production cost very strictly. As a key factor affecting the cost of MCU chips, ROM is highly valued by designers. The whole read only memory (ROM) module is designed according to the technical specifications after the overall design scheme is determined. In the design of memory array, we propose a new structure: Flat-Cell storage structure. Because the cell array is designed in a large active region in Flat-Cell process, it is a planar structure, and the memory cells are isolated by PN junction. There is no field oxidation layer. Therefore, the channel width will not be reduced because of the redistribution of thermal oxidation impurities in the field, there will be no beak phenomenon or narrow channel effect, so the unit area will be reduced, the integration level will be improved, and the performance will be reliable. At the same time, it also reduces the manufacturing cost. Flat-Cell technology and its application have greatly improved the technical index of ROM. The mask read-only memory based on Flat-Cell technology shows its own advantages in function and performance. With the development of technology, the smaller size of Flat-Cell process will become the mainstream technology of mask memory manufacturing. Because it is compatible with CMOS process, more and more IC designers will use it as the preferred process for mask ROM.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TN402;TP333.7
本文编号：2159690
[Abstract]:With the development of science and economy, China has become an important production base and a big consumer of consumer electronic products in the world. Among them, MCU chip is widely used in many consumer electronics because of its high cost-performance ratio. The fierce competition in the market makes MCU chip manufacturers to control the production cost very strictly. As a key factor affecting the cost of MCU chips, ROM is highly valued by designers. The whole read only memory (ROM) module is designed according to the technical specifications after the overall design scheme is determined. In the design of memory array, we propose a new structure: Flat-Cell storage structure. Because the cell array is designed in a large active region in Flat-Cell process, it is a planar structure, and the memory cells are isolated by PN junction. There is no field oxidation layer. Therefore, the channel width will not be reduced because of the redistribution of thermal oxidation impurities in the field, there will be no beak phenomenon or narrow channel effect, so the unit area will be reduced, the integration level will be improved, and the performance will be reliable. At the same time, it also reduces the manufacturing cost. Flat-Cell technology and its application have greatly improved the technical index of ROM. The mask read-only memory based on Flat-Cell technology shows its own advantages in function and performance. With the development of technology, the smaller size of Flat-Cell process will become the mainstream technology of mask memory manufacturing. Because it is compatible with CMOS process, more and more IC designers will use it as the preferred process for mask ROM.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TN402;TP333.7
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