重离子产生δ电子对SRAM单粒子翻转的影响

发布时间：2018-08-11 10:17

【摘要】：随着微电子器件集成度增加,由入射离子在器件灵敏区内引起的δ电子分布对器件单粒子效应的影响越来越显著;尤其是它极易引发多位翻转,严重影响设计加固的有效性。首先利用蒙特卡罗软件包Geant4模拟得到重离子在器件灵敏区内产生的δ电子分布,分析得出以下规律:入射离子单核能越高,其产生δ电子分布的径向范围越大;单核能相同的不同种离子,原子序数越大其产生的δ电子密度越大。其次,通过模拟一款45 nm静态随机存储器的单粒子翻转效应,说明δ电子和灵敏区分布共同影响器件的多位翻转。当器件灵敏区间距一定时,多位翻转率随入射离子能量的升高先上升后下降;在多位翻转率峰值和布喇格峰之间,多位翻转率随入射离子线性能量传输(LET)值的升高而降低,在该区域两侧多位翻转率随离子LET值的升高而升高。
[Abstract]:With the increase of the integration of microelectronic devices, the 未 electron distribution caused by incident ions in the sensitive region of the devices has more and more significant effect on the single particle effect of the devices, especially it is easy to trigger multi-site inversion, which seriously affects the effectiveness of design reinforcement. Firstly, the 未 electron distribution produced by heavy ions in the sensitive region of the device is simulated by Monte Carlo software package Geant4. The following laws are obtained: the higher the single nuclear energy of incident ion, the larger the radial range of 未 electron distribution; The larger the atomic number, the greater the 未 electron density of different ions with the same mononuclear energy. Secondly, by simulating the single particle flip effect of a 45nm static random access memory, it is shown that both 未 electrons and sensitive region distribution affect the multibit flip of the device. When the sensitive region spacing of the device is constant, the multiposition turnover rate increases first and then decreases with the increase of the incident ion energy, and decreases with the increase of the (LET) value of the incident ion linear energy transfer between the multisite turnover rate peak and the Bragg peak. The multisite turnover rate increases with the increase of ion LET value in both sides of the region.
【作者单位】：中国科学院近代物理研究所;中国科学院大学;
【基金】：国家自然科学基金资助项目(11179003,10975164,10805062,11005134)~~
【分类号】：TP333

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