相变混合存储器的研究与设计
发布时间：2018-08-12 12:15
【摘要】：当今在存储系统中，主流的存储器仍然是传统的磁盘和近几年广泛使用的基于FLASH的固态硬盘，，磁盘因受限于内部的机械结构，读写性能较差，而固态硬盘虽然在性能上有了很大的改善，但写数据之前必需要进行块擦除操作，这成为其性能提升的很大阻碍。相变存储器（PCRAM）是一种新型的非易失半导体存储器，利用相变合金材料处于晶态和非晶态的不同电阻率大小来存储二进制数据，相比于FLASH存储器，具有更高的存储密度，更快的读写速度，无需擦除操作和更长的寿命等优点，是符合未来高性能需求的理想存储器。 通过综合SDRAM、FLASH和相变存储器的特点，设计了以SDRAM和相变存储器组成的混合主存系统，具有SDRAM的高速和相变存储器非易失的特点；设计并实现了以相变存储器和FLASH组成的混合外存储系统，具有相变存储器高速读写和FLASH大容量、低成本的特点。混合存储器综合使用了DDR3和PCIE接口技术，达到了高速数据传输的目的。 根据相变存储器的特点，设计了混合存储器的硬件架构，对混合存储器的层次结构、相变存储器的阵列结构给出了详细的设计。对混合主存系统的逻辑结构进行了阐述，设计并实现了混合外存储系统的硬件电路。针对该混合存储器，设计了一种基于CPLD的高效混合存储控制器，在PEX8311接口芯片工作模式下，实现对存储器的单周期访问和DMA数据传输。在Linux操作系统下实现了混合存储器的设备驱动程序，设计了主要的数据结构和功能函数。最后对混合外存储器进行了性能测试，并与传统的磁盘和固态硬盘做了对比与分析。
[Abstract]:In today's storage system, the mainstream memory is still the traditional disk and the solid-state disk based on FLASH, which is widely used in recent years. The disk is limited by the internal mechanical structure, so it has poor read and write performance. Although the performance of solid state hard disk has been greatly improved, block erasure operation is required before writing data, which becomes a big obstacle to its performance improvement. Phase change memory (PCRAM) is a new type of nonvolatile semiconductor memory, which uses different resistivity of phase change alloy material in crystalline state and amorphous state to store binary data, which has higher storage density than FLASH memory. Faster reading and writing speed, no erasure operation and longer life are the ideal memory for high performance in the future. By synthesizing the characteristics of SDRAM flash and phase change memory, a hybrid main memory system composed of SDRAM and phase change memory is designed, which has the characteristics of high speed of SDRAM and non-volatile phase change memory. A hybrid external storage system composed of phase change memory and FLASH is designed and implemented, which has the characteristics of high speed reading and writing of phase change memory, large capacity of FLASH and low cost. Hybrid memory uses DDR3 and PCIE interface technology to achieve the purpose of high-speed data transmission. According to the characteristics of phase change memory, the hardware architecture of hybrid memory is designed. The hierarchical structure of hybrid memory and the array structure of phase change memory are designed in detail. The logic structure of the hybrid main memory system is described, and the hardware circuit of the hybrid external memory system is designed and implemented. For the hybrid memory, an efficient hybrid memory controller based on CPLD is designed. Under the working mode of the PEX8311 interface chip, the single-period access to the memory and the DMA data transmission are realized. The device driver of hybrid memory is implemented in Linux operating system, and the main data structure and function are designed. Finally, the performance of hybrid external memory is tested and compared with traditional disk and solid state hard disk.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TP333
本文编号：2179028
[Abstract]:In today's storage system, the mainstream memory is still the traditional disk and the solid-state disk based on FLASH, which is widely used in recent years. The disk is limited by the internal mechanical structure, so it has poor read and write performance. Although the performance of solid state hard disk has been greatly improved, block erasure operation is required before writing data, which becomes a big obstacle to its performance improvement. Phase change memory (PCRAM) is a new type of nonvolatile semiconductor memory, which uses different resistivity of phase change alloy material in crystalline state and amorphous state to store binary data, which has higher storage density than FLASH memory. Faster reading and writing speed, no erasure operation and longer life are the ideal memory for high performance in the future. By synthesizing the characteristics of SDRAM flash and phase change memory, a hybrid main memory system composed of SDRAM and phase change memory is designed, which has the characteristics of high speed of SDRAM and non-volatile phase change memory. A hybrid external storage system composed of phase change memory and FLASH is designed and implemented, which has the characteristics of high speed reading and writing of phase change memory, large capacity of FLASH and low cost. Hybrid memory uses DDR3 and PCIE interface technology to achieve the purpose of high-speed data transmission. According to the characteristics of phase change memory, the hardware architecture of hybrid memory is designed. The hierarchical structure of hybrid memory and the array structure of phase change memory are designed in detail. The logic structure of the hybrid main memory system is described, and the hardware circuit of the hybrid external memory system is designed and implemented. For the hybrid memory, an efficient hybrid memory controller based on CPLD is designed. Under the working mode of the PEX8311 interface chip, the single-period access to the memory and the DMA data transmission are realized. The device driver of hybrid memory is implemented in Linux operating system, and the main data structure and function are designed. Finally, the performance of hybrid external memory is tested and compared with traditional disk and solid state hard disk.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TP333
【参考文献】
相关期刊论文 前3条
1 沈菊;宋志棠;刘波;封松林;;相变存储器驱动电路的设计与实现[J];半导体技术;2008年05期
2 ;Numonyx发布OmneoPCM系列相变存储芯片[J];中国集成电路;2010年05期
3 刘波,宋志棠,封松林;相变型半导体存储器研究进展[J];物理;2005年04期
本文编号：2179028
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