NiO:Li薄膜的阻变特性研究

发布时间：2018-08-25 10:29

【摘要】：近些年来，阻变式随机存储器被认为是下一代非挥发性存储器，从而引起了人们的广泛关注。阻变式随机存储器因其结构简单，转变速度快，低功耗，密度高,低成本等方面的特点备受关注。 NiO薄膜是一种P型半导体材料，广泛应用于各种不同的领域，包括电致变色，传感器，光电探测器，染料太阳能电池等多个领域。同时，NiO是阻变式随机存储器研究材料中最重要的一种，它已经成为了人们研究的热点。在本论文中，，我们利用脉冲激光沉积技术制备了NiO:Li薄膜，并研究了不同衬底温度及氧气分压对薄膜的影响，并以此为依据，构造了Pt/NiO:Li/Pt三层结构的阻变式随机存储器。其研究内容如下：通过调节衬底温度和氧气分压成功制备了NiO:Li薄膜；制备得到的存储器件开关电压分别为2.4V和1.4V，开关电阻分别为200K和15K，开关转变速度分别为200ns和1μs；其导电机制主要是SCLC导电类型，其电阻转变机制符合导电通道模型。
[Abstract]:In recent years, resistive random access memory (RRAM) is regarded as the next generation of nonvolatile memory, which has attracted much attention. Resistive random access memory (RRAM) has attracted much attention because of its simple structure, fast transition speed, low power consumption, high density and low cost. NiO thin film is a kind of P-type semiconductor material, which is widely used in various fields. Including electrochromic, sensor, photodetector, dye solar cells and other fields. At the same time, nio is one of the most important materials in the research of resistive random access memory (RAM). In this thesis, we prepared NiO:Li thin films by pulsed laser deposition, and studied the effects of substrate temperature and oxygen partial pressure on the films. Based on this, we constructed the resistive random access memory (RAM) with Pt/NiO:Li/Pt three-layer structure. The research contents are as follows: NiO:Li thin films were successfully prepared by adjusting the substrate temperature and oxygen partial pressure, the switching voltage of the memory device was 2.4 V and 1.4 V, the switching resistance was 200K and 15K, and the switching speed was 200ns and 1 渭 s, respectively. The main conduction mechanism is SCLC, and its resistance transition mechanism is in accordance with the conductive channel model.
【学位授予单位】：东北师范大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TP333;TN304.055

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