基于TMR效应的磁随机存储器存储单元制备工艺研究
发布时间：2018-08-27 15:31
【摘要】：磁随机存储器MRAM（Magnetic RandomAccess Memory）是一种非易失性存储器，其原理是利用TMR或GMR的高和低两种电阻稳态进行信息的存储。MRAM作为一种新型的数据存储器，与其他随机存储器相比具有许多明显的优势：高的集成度、高速读取写入能力、重复可读写次数近乎无穷大、低功耗和高抗辐射能力以及最为突出的非易失性。它的应用会开启固态数据信息存储技术的新时代。 本文重点研究基于TMR效应的磁随机存储器存储单元结构的微纳米制备工艺。论文首先介绍了磁随机存储器存储单元功能层材料的选择，随后介绍了其存储单元的常用工艺制备方法，并根据实验的需要对其TMR单元结构加以改进，设计了新的单元结构，在此基础上，，并结合实验室条件，设计了本研究拟采用的工艺制备方法，在经过反复实验后总结出最佳工艺制备流程。通过微纳米制造平台进行工艺制备，对制作出的样品进行物理特性测试发现每个单元都产生了明显的TMR效应，且磁阻变化率在9%~17%，测试结果表明工艺在实验上是成功的。最后对实验结果进行了理论分析，指出了对结果造成影响的几个主要因素，并对今后存储器存储单元的制备提出了展望。 具有TMR效应的MRAM存储单元的成功制备，为进一步深入研究MTJ的材料、MTJ新结构及MRAM存储单元的读写特性优化提供了切实可行的实现经验。
[Abstract]:Magnetic random access memory (MRAM (Magnetic RandomAccess Memory) is a kind of nonvolatile memory. Its principle is to use TMR or GMR to store information in high and low resistor steady-state as a new type of data memory. Compared with other random access memory, it has many obvious advantages: high integration, high reading and writing ability, almost infinity of repetition, low power consumption and high radiation resistance, and the most prominent non-volatile. Its application will open a new era of solid-state data storage technology. In this paper, we focus on the fabrication process of magnetic random access memory cell structure based on TMR effect. In this paper, the selection of functional layer materials for memory cells of magnetic random access memory (RAM) is first introduced, and then the common fabrication methods of the memory cells are introduced. The TMR cell structure is improved according to the need of experiments, and a new cell structure is designed. On the basis of this, combined with the laboratory conditions, the process preparation method was designed, and the optimum process was summarized after repeated experiments. The physical properties of the prepared samples were tested on a micro and nano manufacturing platform. It was found that each unit had obvious TMR effect and the change rate of magnetoresistive was 9 / 17. The test results showed that the process was successful in experiment. Finally, the experimental results are theoretically analyzed, and several main factors affecting the results are pointed out, and the prospects for the preparation of memory cells in the future are put forward. The successful preparation of MRAM memory cells with TMR effect provides practical experience for further research on the new structure of MTJ materials and the optimization of the reading and writing characteristics of MRAM memory cells.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TP333
本文编号：2207700
[Abstract]:Magnetic random access memory (MRAM (Magnetic RandomAccess Memory) is a kind of nonvolatile memory. Its principle is to use TMR or GMR to store information in high and low resistor steady-state as a new type of data memory. Compared with other random access memory, it has many obvious advantages: high integration, high reading and writing ability, almost infinity of repetition, low power consumption and high radiation resistance, and the most prominent non-volatile. Its application will open a new era of solid-state data storage technology. In this paper, we focus on the fabrication process of magnetic random access memory cell structure based on TMR effect. In this paper, the selection of functional layer materials for memory cells of magnetic random access memory (RAM) is first introduced, and then the common fabrication methods of the memory cells are introduced. The TMR cell structure is improved according to the need of experiments, and a new cell structure is designed. On the basis of this, combined with the laboratory conditions, the process preparation method was designed, and the optimum process was summarized after repeated experiments. The physical properties of the prepared samples were tested on a micro and nano manufacturing platform. It was found that each unit had obvious TMR effect and the change rate of magnetoresistive was 9 / 17. The test results showed that the process was successful in experiment. Finally, the experimental results are theoretically analyzed, and several main factors affecting the results are pointed out, and the prospects for the preparation of memory cells in the future are put forward. The successful preparation of MRAM memory cells with TMR effect provides practical experience for further research on the new structure of MTJ materials and the optimization of the reading and writing characteristics of MRAM memory cells.
【学位授予单位】：华中科技大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TP333
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